Datasheet LND150 (Microchip) - 3

LND150 Typical Performance Curves Output Characteristics Saturation Characteristics
6 6 V = 1.0V V = 1.0V GS GS 5 5 4 4 0.5V 0.5V 3 3
(milliamps) (milliamps) I D I D
2 2 0V 0V 1 1 -0.5V -0.5V 0 -1.0V 0 -1.0V 0 250 500 0 1 2 3 4 5
V (V) V (V) DS DS Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature
10 2 V = 400V DS TO-243AA 8 T = -55°C A
)
6
)
25°C 1
(Watts
4
(millisiemens P D
TO-92 125°C
G FS
TO-236AB 2 0 0 0 2 4 6 8 10 0 150 50 100
I (milliamps) T (°C) D A Maximum Rated Safe Operating Area Thermal Response Characteristics
100 1.0 TO-243AA (DC) Pulsed
)
0.8 TO-243AA TO-92 (DC) T = 25°C A P = 1.2W 10 D TO-236 (DC) 0.6
(milliamps) I D
0.4 1 TO-92 T = 25°C 0.2 P = 1.0W D A 300µs pulse
Thermal Resistance (normalized
T = 25°C C 2% duty cycle 0.1 0 1 1000 10 100 0.001 10 0.01 0.1 1.0
V (V) t (seconds) DS P
Doc.# DSFP-LND150
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C041114 3
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