LT1249 ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the operating temperaturerange, otherwise specifications are at TA = 25 ° C. Maximum operating voltage (VMAX) = 25V, VCC = 18V, IAC = 100 µ A, CAOUT = 3.5V,VAOUT = 5V, no load on any outputs, unless otherwise noted.PARAMETERCONDITIONSMINTYPMAXUNITSReference Reference Output Voltage TA = 25°C, Measured at VSENSE Pin 7.39 7.5 7.6 V Reference Output Voltage Worst Case All Line, Temperature ● 7.32 7.5 7.68 V Reference Output Voltage Line Regulation VLOCKOUT < VCC < VMAX ● – 20 5 20 mV Multiplier Multiplier Output Current IAC = 100µA, VAOUT = 5V 35 µA Multiplier Output Current Offset RAC = 1M from IAC to GND ● – 0.05 – 0.5 µA Multiplier Max Output Current (IM(MAX)) IAC = 450µA, VAOUT = 7V (Note 2) ● – 375 – 250 – 150 µA Multiplier Max Output Voltage (IM(MAX) • RMOUT) IAC = 450µA, VAOUT = 7V (Note 2) ● – 1.25 – 1.1 – 0.96 V Multiplier Gain Constant (Note 3) 0.035 V–2 IAC Input Resistance IAC from 50µA to 1mA 15 32 50 kΩ Oscillator Oscillator Frequency ● 75 100 125 kHz Control Pin (CAOUT) Threshold Duty Cycle = 0 ● 1.3 1.8 2.3 V Synchronization Frequency Range Synchronizing Pulse Low ≤ 0.35V on CAOUT ● 127 160 kHz Gate Driver Max GTDR Output Voltage 0mA Load, 18V < VCC < VMAX (Note 4) ● 12 15 17.5 V GTDR Output High – 200mA Load, 11.5V ≤ VCC ≤ 15V ● VCC – 3.0 V GTDR Output Low (Device Unpowered) VCC = 0V, 50mA Load (Sinking) ● 0.9 1.5 V GTDR Output Low (Device Active) 200mA Load (Sinking) ● 0.5 1 V Peak GTDR Current 10nF from GTDR to GND 1.5 A GTDR Rise and Fall Time 1nF from GTDR to GND 25 ns GTDR Max Duty Cycle 90 96 % Note 1: Absolute Maximum Ratings are those values beyond which the life I Note 3: Multiplier Gain Constant: K = M of a device may be impaired. IAC (VAOUT – 1.5)2 Note 2: Current amplifier is in linear mode with 0V input common mode. Note 4: Maximum GTDR output voltage is internally clamped for higher VCC voltages. WUTYPICAL PERFORMANCE CHARACTERISTICSVoltage Amplifier Open-LoopTransconductance ofGain and PhaseCurrent Amplifier 100 0 400 20 θ 350 0 80 –20 gm GAIN 300 –20 µmho) 60 –40 PHASE (DEG) PHASE (DEG) 250 –40 40 –60 200 –60 GAIN (dB) 150 –80 20 –80 PHASE 100 –100 TRANSCONDUCTANCE ( 0 –100 50 –120 –20 –120 0 –140 10 100 1k 10k 100k 1M 10M 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) 1249 G01 1249 G02 3