Datasheet MCP9902, MCP9903, MCP9904 (Microchip) - 3
Manufacturer | Microchip |
Description | Multi-Channel Low-Temperature Remote Diode Sensor |
Pages / Page | 50 / 3 — MCP9902/3/4. 1.0. ELECTRICAL CHARACTERISTICS. 1.1. Electrical … |
File Format / Size | PDF / 510 Kb |
Document Language | English |
MCP9902/3/4. 1.0. ELECTRICAL CHARACTERISTICS. 1.1. Electrical Specifications. Absolute Maximum Ratings(†). ( 1. † NOTICE. Note 1:. 1.2
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MCP9902/3/4 1.0 ELECTRICAL CHARACTERISTICS 1.1 Electrical Specifications Absolute Maximum Ratings(†)
Ambient Temperature under Bias.. -40°C to +125°C Storage Temperature ... -65°C to +150°C Voltage on VDD with respect to VSS ... -0.3V to +4.0V Voltage on all other pins with respect to VSS ... -0.3V to (VDD + 0.3V) Total Power Dissipation
( 1 )
... 500 mW Maximum Current out of VSS pin ... 20 mA Maximum Current into VDD pin .. 20 mA Clamp Current, IK (VPIN < 0 or VPIN > VDD)20 mA ESD Rating, All pins HBM... 2000V Input Current, any pin Except VDD 10 mA
† NOTICE
: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for extended periods may affect device reliability.
Note 1:
Power dissipation is calculated as follows: PDIS = VDD x {IDD – IOH} + {(VDD – VOH) x IOH} + (VOL x IOL). Rating up to +85°C.
1.2 DC Characteristics Electrical Characteristics
: Unless otherwise specified, 3.0 ≤ VDD ≤ 3.6V at -40°C ≤ TA ≤ +125°C
Characteristic Sym. Min. Typ. Max. Units Conditions Power Supply
Supply Voltage VDD 3.0 3.3 3.6 V — Supply Current IDD — 200 450 µA 0.0625 conversion/second, dynamic averaging disabled — 225 600 µA 1 conversion/second, dynamic averaging enabled — 450 850 µA 4 conversions/second, dynamic averaging enabled — 1120 1500 µA > 16 conversions/second, dynamic averaging enabled One-Shot Supply IDD_OS — 170 230 µA Device in One-Shot state, no active Current SMBus communications, ALERT and THERM pins not asserted. Standby Supply Current IDD_SBY — 170 230 µA Device in Standby state, no SMBus communications, ALERT and THERM pins not asserted. Power-on Reset POR_V — 0.6 0.9 V Pin states defined Voltage Power-On Reset PORR — 1.45 — V Rising VDD Release Voltage Power-Up Timer tPWRT — 10 — ms — VDD Rise Rate VDD_RISE 0.05 — — V/ms 0 to 3V in 60 ms Supply Voltage VDD 3.0 3.3 3.6 V — 2015-2016 Microchip Technology Inc. DS20005382C-page 3 Document Outline Multi-Channel Low-Temperature Remote Diode Sensor Features Typical Applications Description Package Types MCP9902/3/4 Functional Block Diagram 1.0 Electrical Characteristics 1.1 Electrical Specifications Absolute Maximum Ratings 1.2 DC Characteristics 1.3 Thermal Specifications FIGURE 1-1: POR and POR Rearm With Slow Rising VDD. 1.4 SMBUS Module Specifications FIGURE 1-2: SMBus Timing Diagram. 2.0 Typical Operating Curves FIGURE 2-1: Supply Current vs. Conversion Rate (TA = +25°C, VDD = 3.3V). FIGURE 2-2: IDD vs. Temperature. FIGURE 2-3: Temperature Error vs. Filter Capacitor (VDD = 3.3V, TA = TD = +25°C, 2N3904). FIGURE 2-4: Temperature Error vs. Ambient Temperature (VDD = 3.3V, TD = +25°C, 16 Units, 2N3904). FIGURE 2-5: Temperature Error vs. Remote Temperature. (VDD = 3.3V, TD = +25°C, 16 Units, 2N3904). FIGURE 2-6: Temperature Error vs. Series Resistance (TA = +25°C, VDD = 3.3V). 3.0 Pin Descriptions TABLE 3-1: Pin Function Table 3.1 Power Supply (VDD) 3.2 Diode 1 Pair (DN1/DP1) 3.3 Diode 2 Pair (DN2/DP2) 3.4 Anti-Parallel Diode Pair (DN3/DP2 and DN2/DP3) (MCP9904 only) 3.5 THERM LIMIT ALERT (THERM/ADDR) 3.6 Ground (GND) 3.7 Maskable ALERT (ALERT/THERM2) 3.8 SMBus Data (SMDATA) 3.9 SMBus Clock (SMCLK) 3.10 Exposed Thermal Pad (EP) 4.0 Functional Description FIGURE 4-1: MCP9902/3/4 System Diagram. 4.1 Power States 4.2 Conversion Rates TABLE 4-1: Conversion Rate 4.3 Dynamic Averaging 4.4 THERM Output 4.5 THERM Pin Address Decoding TABLE 4-2: I2C/SMBus Address Decode 4.6 ALERT/THERM2 Output 4.7 Temperature Measurement 4.8 Beta Compensation 4.9 Resistance Error Correction (REC) 4.10 Programmable External Diode Ideality Factor TABLE 4-3: Ideality Factor Look-Up Table (Diode Model) TABLE 4-4: Substrate Diode Ideality Factor Look-Up Table (BJT Model) 4.11 Diode Faults 4.12 Consecutive Alerts TABLE 4-5: Consecutive Alert/ THERM Settings 4.13 Limit Register Interaction 4.14 Digital Filter TABLE 4-6: Filter Settings FIGURE 4-2: Temperature Filter Step Response. FIGURE 4-3: Temperature Filter Impulse Response. 4.15 Temperature Measurement Results and Data TABLE 4-7: Temperature Data Format 5.0 Communications Protocol 5.1 SMBus Control Bits 5.2 SMBus Timeout 5.3 SMBus and I2C Compatibility 5.4 SMBus Protocols TABLE 5-1: Protocol Format TABLE 5-2: Write Byte Protocol TABLE 5-3: Read Byte Protocol TABLE 5-4: Send Byte Protocol TABLE 5-5: Receive Byte Protocol 5.5 Alert Response Address TABLE 5-6: Alert Response Address Protocol 5.6 Register Description TABLE 5-7: Register Set in Hexadecimal Order (Continued) 5.7 Data Read Interlock Register 5-1: iNT TEMP HI BYTE: Internal Diode High Byte Temperature Data Register (ADDRESS 00h) Register 5-2: INT temp LO byte: Internal Diode LOW Byte Temperature Data Register (ADDRESS 29h) Register 5-3: EXT(n) TEMP hi byte: EXTERNAL Diode High Byte Temperature Data Register (Addresses 01h, 23h, 2Ah) Register 5-4: EXT(n) TEMP Lo Byte: EXTERNAL Diode LOW Byte Temperature Data Register (Addresses 10h, 24h, 2Bh) Register 5-5: Status: status register reporting state of internal and external diodes (ADDRESS 02h) Register 5-6: CONFIG: Configuration Register (Addresses 03h and 09h) Register 5-7: CONVERT: TEMPERATURE CONVERSION RATE REGISTER (ADDRESS 04h, 0AH) Register 5-8: int diode hi limit temp: INTERNAL DIODE HIGH LIMIT TEMPERATURE REGISTER (Addresses 05h and 0Bh) Register 5-9: int diode lo lim TEMP – INTERNAL DIODE LOW LIMIT TEMPERATURE REGISTER (addresses 06H AND 0CH) Register 5-10: EXT(n) hi lim temp HB – EXTERNAL DIODE N HIGH TEMPERATURE LIMIT, high byte REGISTER (addresses 07h and 0dh, 15h, 2Ch) Register 5-11: EXT(n) hi lim LB – EXTERNAL DIODE N HIGH LIMIT TEMPERATURE, low byte REGISTER (Addresses 13H, 17h, 2eh) Register 5-12: EXT(n) lo lim HB – EXTERNAL DIODE N low LIMIT, high byte TEMPERATURE REGISTER (addresses 08h and 0eh, 16h, 2Dh) Register 5-13: EXT(N) LO lim LB – EXTERNAL DIODE N LOW LIMIT, low byte TEMPERATURE REGISTER (Addresses 14H, 18h, 2fh) Register 5-14: scrtchpd(N): sCRATCHPAD REGISTER (addresses 11H AND 12H) Register 5-15: ONE SHOT – ONE-shot temperature conversion initiation REGISTER (address 0fh) Register 5-16: EXT(n) THrm lim – external diode (N) therm limit REGISTER (addresses 19h, 1Ah and 30h) Register 5-17: iNTD THrm lim – internal diode therm limit REGISTER (address 20h) Register 5-18: THRM HYS – therm limit hysteresis REGISTER (address 21h) Register 5-19: EXT FLT STS – external diode fault status REGISTER (address 1Bh) Register 5-20: DIODE FAULT MASK – diode fault mask REGISTER (address 1Fh) Register 5-21: CONSEC ALERT – Consecutive Alert Register (address 22h) Register 5-22: ext(N) beta cfg – beta compensation configuration Register (addresses 25h and 26h) Register 5-23: ext (n) IDEALITY FACTOR – External Diode N Ideality Factor Register (addresses 27h, 28h and 31h) Register 5-24: HI LIM STS – High Limit Status Register (address 35h) Register 5-25: LO LIM STS – Low Limit Status Register (address 36h) Register 5-26: THRM LIM STS – High Limit Status Register (address 37h) Register 5-27: FLTR SEL: Filter Selection Register (address 40h) Register 5-28: PROD_ID – Product ID Register (address FDh) Register 5-29: MCHP_ID – Manufacturer ID Register (address FEh) Register 5-30: REVISION – Revision Register (address FFh) 6.0 Packaging Information 6.1 Package Marking Information Appendix A: Revision History Revision C (July 2016) Revision B (March 2016) Revision A (December 2015) Product Identification System Trademarks Worldwide Sales and Service