Datasheet Si4490DY (Vishay) - 4
| Manufacturer | Vishay |
| Description | N-Channel 200-V (D-S) MOSFET |
| Pages / Page | 7 / 4 — Si4490DY. TYPICAL CHARACTERISTICS. Threshold Voltage. Single Pulse Power |
| File Format / Size | PDF / 166 Kb |
| Document Language | English |
Si4490DY. TYPICAL CHARACTERISTICS. Threshold Voltage. Single Pulse Power
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Text Version of Document
Si4490DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 1.0 60 50 0.5 ID = 250 µA 40 0.0 riance (V) a er (W) 30 V w o - 0.5 P GS(th) 20 V - 1.0 10 - 1.5 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
2 1 Duty Cycle = 0.5 ansient Tr 0.2 e Notes: fectiv 0.1 mal Impedance 0.1 P ed Ef DM 0.05 Ther maliz t1 t2 Nor t1 0.02 1. Duty Cycle, D = t2 2. Per Unit Base = R thJA = 65 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient 0.2 e T ffectiv 0.1 mal Impedance 0.1 ed E 0.05 Ther maliz 0.02 Nor Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71341. www.vishay.com Document Number: 71341 4 S09-0705-Rev. C, 27-Apr-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 1.0 60 50 0.5 ID = 250 µA 40 0.0 riance (V) a er (W) 30 V w o - 0.5 P GS(th) 20 V - 1.0 10 - 1.5 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
2 1 Duty Cycle = 0.5 ansient Tr 0.2 e Notes: fectiv 0.1 mal Impedance 0.1 P ed Ef DM 0.05 Ther maliz t1 t2 Nor t1 0.02 1. Duty Cycle, D = t2 2. Per Unit Base = R thJA = 65 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient 0.2 e T ffectiv 0.1 mal Impedance 0.1 ed E 0.05 Ther maliz 0.02 Nor Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71341. www.vishay.com Document Number: 71341 4 S09-0705-Rev. C, 27-Apr-09
