Datasheet OP284CHIPS (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Precision Rail-to-Rail Input and Output Operational Amplifier |
| Pages / Page | 5 / 3 — Data Sheet. OP284CHIPS. SPECIFICATIONS ELECTRICAL CHARACTERISTICS, VSY = … |
| File Format / Size | PDF / 245 Kb |
| Document Language | English |
Data Sheet. OP284CHIPS. SPECIFICATIONS ELECTRICAL CHARACTERISTICS, VSY = ±15.0 V. Table 2. Parameter. Symbol
Model Line for this Datasheet
Text Version of Document
Data Sheet OP284CHIPS SPECIFICATIONS ELECTRICAL CHARACTERISTICS, VSY = ±15.0 V
VSY = ±15.0 V, VCM = 0 V, VOUT = 0 V, TA = +25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 175 μV Offset Voltage Drift ΔVOS/ΔT 0.3 μV/°C Input Bias Current IB 150 nA Input Offset Current IOS 50 nA Input Voltage Range −15 +15 V Common-Mode Rejection Ratio CMRR VCM = −15.0 V to +15.0 V 80 90 dB Large Signal Voltage Gain AVO −10.0 V ≤ VO ≤ +10.0 V, RL = 2 kΩ 150 1000 V/mV OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1.0 mA 14.8 V Output Voltage Low VOL IL = 1.0 mA −14.875 V Short-Circuit Current IOUT −10 +10 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±2 V to ±18 V 90 dB Supply Current per Amplifier ISY VO = 0 V 2.0 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 2.4 4.0 V/µs Gain Bandwidth Product GBP 4.25 MHz Phase Margin ΦM 50 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.3 µV p-p Voltage Noise Density en f = 1 kHz 3.9 nV/√Hz Current Noise Density in 0.4 pA/√Hz Rev. A | Page 3 of 5 Document Outline FEATURES GENERAL DESCRIPTION OP284 CHIP DIMENSIONS AND PAD LAYOUT TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS, VSY = ±15.0 V ABSOLUTE MAXIMUM RATINGS ESD CAUTION OUTLINE DIMENSIONS DIE PAD DESCRIPTIONS ORDERING GUIDE
VSY = ±15.0 V, VCM = 0 V, VOUT = 0 V, TA = +25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 175 μV Offset Voltage Drift ΔVOS/ΔT 0.3 μV/°C Input Bias Current IB 150 nA Input Offset Current IOS 50 nA Input Voltage Range −15 +15 V Common-Mode Rejection Ratio CMRR VCM = −15.0 V to +15.0 V 80 90 dB Large Signal Voltage Gain AVO −10.0 V ≤ VO ≤ +10.0 V, RL = 2 kΩ 150 1000 V/mV OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1.0 mA 14.8 V Output Voltage Low VOL IL = 1.0 mA −14.875 V Short-Circuit Current IOUT −10 +10 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±2 V to ±18 V 90 dB Supply Current per Amplifier ISY VO = 0 V 2.0 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 2.4 4.0 V/µs Gain Bandwidth Product GBP 4.25 MHz Phase Margin ΦM 50 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.3 µV p-p Voltage Noise Density en f = 1 kHz 3.9 nV/√Hz Current Noise Density in 0.4 pA/√Hz Rev. A | Page 3 of 5 Document Outline FEATURES GENERAL DESCRIPTION OP284 CHIP DIMENSIONS AND PAD LAYOUT TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS, VSY = ±15.0 V ABSOLUTE MAXIMUM RATINGS ESD CAUTION OUTLINE DIMENSIONS DIE PAD DESCRIPTIONS ORDERING GUIDE
