Datasheet LT8315 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 560VIN Micropower No-Opto Isolated Flyback Converter with 630V/300mA Switch |
| Pages / Page | 24 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply … |
| File Format / Size | PDF / 1.6 Mb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating
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LT8315
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. BIAS = 40V, VEN/UVLO = 40V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
BIAS Chip Bias Voltage Supply Range After Startup l 9.5 40 V IQ BIAS Quiescent Current Burst Mode Operation 70 150 μA Active 470 700 ISHDN DRAIN Shutdown Current VEN/UVLO < 0.3V, BIAS = Floating 8 15 μA VDRAIN(MIN) Minimum Drain Voltage for Startup BIAS = Floating l 18 V ISTARTUP Startup Current through Depletion FET VDRAIN = 18V, BIAS = Floating l 130 300 μA VUVLO EN/UVLO Threshold VEN/UVLO Falling 1.18 1.22 1.26 V EN/UVLO Hysteresis VEN/UVLO Rising 30 65 120 mV INTVCC UVLO Rising Threshold Startup Current through Depletion FET 11.1 12 13.1 V INTVCC UVLO Falling Threshold 7.7 8.2 8.7 V VREG FB Regulation Voltage l 1.19 1.22 1.25 V GM Voltage Error Amplifier Transconductance VFB = 1.22V ± 20mV l 75 100 125 μS VTC TC Voltage TA = 25°C 1.16 1.22 1.28 V TC Voltage Temperature Coefficient +4.1 mV/°C ITC TC Sinking/Sourcing Current ±100 μA IIREG/SS IREG/SS Current Current Out-of-Pin 9.9 10 10.1 μA l 9.5 10.5 IDCM Flyback Collapse Detection Threshold IDCM Rising –140 −170 –200 μA Resonant Valley Detection Threshold IDCM Falling –65 −85 –105 μA RSW Power MOSFET Resistance 7 10 Ω ISW(MAX) Maximum Switch Current 500 800 mA l 300 mA VSOURCE(MIN) Minimum Current Voltage Threshold 15 20 25 mV VSOURCE(MAX) Maximum Current Voltage Threshold 90 100 110 mV VSOURCE(ILIM) Over-Current Voltage Threshold 250ns Blanking Period; Restarts Chip 110 120 130 mV FSW(MIN) Minimum Switching Frequency Burst Mode 3 3.5 4 kHz Standby Mode 187 220 250 Hz FSW(MAX) Maximum Switching Frequency 138 140 142 kHz
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings characterization and correlation with statistical process controls. The may cause permanent damage to the device. Exposure to any Absolute LT8315I is guaranteed over the full −40°C to 125°C operating junction Maximum Rating condition for extended periods may affect device temperature range. The LT8315H is guaranteed over the full −40°C to reliability and lifetime. 150°C operating junction temperature range. High junction temperatures
Note 2:
The LT8315E is guaranteed to meet performance specifications degrade operating lifetimes. Operating lifetime is derated at junction from 0°C to 125°C junction temperature. Specifications over the −40°C temperatures greater than 125°C. to 125°C operating junction temperature range are assured by design 8315fa For more information www.linear.com/LT8315 3 Document Outline FEATURES APPLICATIONS DESCRIPTION TYPICAL APPLICATION ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION ORDER INFORMATION ELECTRICAL CHARACTERISTICS TYPICAL PERFORMANCE CHARACTERISTICS PIN FUNCTIONS BLOCK DIAGRAM OPERATION APPLICATIONS INFORMATION PACKAGE DESCRIPTION REVISION HISTORY TYPICAL APPLICATION RELATED PARTS
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. BIAS = 40V, VEN/UVLO = 40V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
BIAS Chip Bias Voltage Supply Range After Startup l 9.5 40 V IQ BIAS Quiescent Current Burst Mode Operation 70 150 μA Active 470 700 ISHDN DRAIN Shutdown Current VEN/UVLO < 0.3V, BIAS = Floating 8 15 μA VDRAIN(MIN) Minimum Drain Voltage for Startup BIAS = Floating l 18 V ISTARTUP Startup Current through Depletion FET VDRAIN = 18V, BIAS = Floating l 130 300 μA VUVLO EN/UVLO Threshold VEN/UVLO Falling 1.18 1.22 1.26 V EN/UVLO Hysteresis VEN/UVLO Rising 30 65 120 mV INTVCC UVLO Rising Threshold Startup Current through Depletion FET 11.1 12 13.1 V INTVCC UVLO Falling Threshold 7.7 8.2 8.7 V VREG FB Regulation Voltage l 1.19 1.22 1.25 V GM Voltage Error Amplifier Transconductance VFB = 1.22V ± 20mV l 75 100 125 μS VTC TC Voltage TA = 25°C 1.16 1.22 1.28 V TC Voltage Temperature Coefficient +4.1 mV/°C ITC TC Sinking/Sourcing Current ±100 μA IIREG/SS IREG/SS Current Current Out-of-Pin 9.9 10 10.1 μA l 9.5 10.5 IDCM Flyback Collapse Detection Threshold IDCM Rising –140 −170 –200 μA Resonant Valley Detection Threshold IDCM Falling –65 −85 –105 μA RSW Power MOSFET Resistance 7 10 Ω ISW(MAX) Maximum Switch Current 500 800 mA l 300 mA VSOURCE(MIN) Minimum Current Voltage Threshold 15 20 25 mV VSOURCE(MAX) Maximum Current Voltage Threshold 90 100 110 mV VSOURCE(ILIM) Over-Current Voltage Threshold 250ns Blanking Period; Restarts Chip 110 120 130 mV FSW(MIN) Minimum Switching Frequency Burst Mode 3 3.5 4 kHz Standby Mode 187 220 250 Hz FSW(MAX) Maximum Switching Frequency 138 140 142 kHz
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings characterization and correlation with statistical process controls. The may cause permanent damage to the device. Exposure to any Absolute LT8315I is guaranteed over the full −40°C to 125°C operating junction Maximum Rating condition for extended periods may affect device temperature range. The LT8315H is guaranteed over the full −40°C to reliability and lifetime. 150°C operating junction temperature range. High junction temperatures
Note 2:
The LT8315E is guaranteed to meet performance specifications degrade operating lifetimes. Operating lifetime is derated at junction from 0°C to 125°C junction temperature. Specifications over the −40°C temperatures greater than 125°C. to 125°C operating junction temperature range are assured by design 8315fa For more information www.linear.com/LT8315 3 Document Outline FEATURES APPLICATIONS DESCRIPTION TYPICAL APPLICATION ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION ORDER INFORMATION ELECTRICAL CHARACTERISTICS TYPICAL PERFORMANCE CHARACTERISTICS PIN FUNCTIONS BLOCK DIAGRAM OPERATION APPLICATIONS INFORMATION PACKAGE DESCRIPTION REVISION HISTORY TYPICAL APPLICATION RELATED PARTS
