Datasheet RH129 (Analog Devices) - 2

ManufacturerAnalog Devices
Description6.9V Precision Reference
Pages / Page2 / 2 — TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 3). …
File Format / SizePDF / 134 Kb
Document LanguageEnglish

TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 3). 10KRAD(Si). 20KRAD(Si). 50KRAD(Si). 100KRAD(Si). 200KRAD(Si)

TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 3) 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)

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RH129
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 3) 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VZ Reverse Breakdown Voltage 0.6mV I R 15mA 6.7 7.2 6.7 7.2 6.7 7.2 6.7 7.2 6.7 7.2 V V Z Reverse Breakdown Voltage 0.6mV I R 15mA 14 14 20 30 50 mV I Z Change with Current V Z Temperature Coefficient IR = 1mA, RH129A 10 10 10 15 20 ppm/°C Temp – 55°C T A 125°C RH129B 20 20 20 25 30 ppm/°C RH129C 50 50 50 55 60 ppm/°C
Note 1:
Guaranteed by design, characterization or correlation to other
Note 2:
Guaranteed by correlation testing including enhancements for tested parameters. popcorn noise detection.
Note 3:
TA = 25°C unless otherwise noted.
W U TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP PDA Test Notes:
The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance Final Electrical Test Requirements (Method 5004) 1*, 2, 3 with method 5004 of MIL-STD-883. The verified failures of group A, Group A Test Requirements (Method 5005) 1, 2, 3 subgroup 1, after burn-in divided by the total number of devices submitted Group B and D for Class S and Group C and D for Class B 1 for burn-in in that lot shall be used to determine the percent for the lot. End Point Electrical Parameters (Method 5005) Linear Technology Corporation reserves the right to test to tighter limits than those given. * PDA Applies to subgroup 1. See PDA Test Notes.
W U TYPICAL PERFORMANCE CHARACTERISTICS Reverse Breakdown Voltage Reverse Breakdown Voltage Change with Current
7.03 0 I 0.6mA R = 1mA ≤ IR ≤ 15mA 7.02 –5 7.01 –10 7.00 –15 6.99 –20 CHANGE WITH CURRENT (mV) 6.98 REVERSE BREAKDOWN VOLTAGE –25 REVERSE BREAKDOWN VOLTAGE (V) 6.97 –30 1 10 100 1000 1 10 100 1000 TOTAL DOSE KRAD (Si) RH129 • TPC01 TOTAL DOSE KRAD (Si) RH129 • TPC02
Temperature Coefficient Reverse Dynamic Impedance
15 7 IR ≤ 1mA VS = ±15V °C) 6 VCM = 0V 10 5 5 4 0 3 –5 2 –10 1 TEMPERATURE COEFFICIENT (ppm/ REVERSE DYNAMIC IMPEDANCE (HRS) –15 0 1 10 100 1000 1 10 100 1000 TOTAL DOSE KRAD (Si) RH129 • TPC03 TOTAL DOSE KRAD (Si) RH129 • TPC04 I.D. No. 66-10-0174 Rev. A 0397 LT/HP 0497 500 REV A • PRINTED IN USA 2 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 ● (408) 432-1900 FAX: (408) 434-0507 ● TELEX: 499-3977 ● www.linear-tech.com LINEAR TECHNOLOGY CORPORATION 1990