Datasheet LT1004 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Micropower Voltage Reference |
| Pages / Page | 12 / 3 — elecTrical characTerisTics. The. denotes the specifications which apply … |
| File Format / Size | PDF / 684 Kb |
| Document Language | English |
elecTrical characTerisTics. The. denotes the specifications which apply over the full operating
Model Line for this Datasheet
- LT1004C-1.2DICE LT1004C-1.2DICE#MILDICE LT1004C-2.5DICE LT1004C-2.5DICE#MILDICE LT1004CS8-1.2#PBF LT1004CS8-1.2#TRPBF LT1004CS8-2.5#PBF LT1004CS8-2.5#TRPBF LT1004CZ-1.2#PBF LT1004CZ-1.2#TRPBF LT1004CZ-2.5#PBF LT1004CZ-2.5#TRPBF LT1004IS8-1.2#PBF LT1004IS8-1.2#TRPBF LT1004IS8-2.5#PBF LT1004IS8-2.5#TRPBF LT1004IZ-1.2#PBF LT1004IZ-1.2#TRPBF LT1004IZ-2.5#PBF LT1004IZ-2.5#TRPBF
Text Version of Document
LT1004
elecTrical characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. C, I SUFFIXES H SUFFIX SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
VZ Reverse Breakdown Voltage IR = 100µA 1.231 1.235 1.239 2.480 2.500 2.520 V LT1004M: –55°C ≤ TA ≤ 125°C ● 1.220 1.230 1.245 2.460 2.500 2.535 V LT1004C: 0°C ≤ TA ≤ 70°C ● 1.225 1.235 1.245 2.470 2.500 2.530 V LT1004I: –40°C ≤ TA ≤ 85°C ● 1.220 1.230 1.245 2.460 2.500 2.530 V ∆VZ Average Temperature Coefficient IMIN ≤ IR ≤ 20mA (Note 3) 20 20 ppm/°C ∆Temp IMIN Minimum Operating Current ● 8 10 12 20 µA ∆VZ Reverse Breakdown Voltage IMIN ≤ IR ≤ 1mA 1.0 1.0 mV ∆I Change with Current ● 1.5 1.5 mV R 1mA ≤ IR ≤ 20mA 10 10 mV ● 20 20 mV rZ Reverse Dynamic Impedance IR = 100µA 0.2 0.6 0.2 0.6 Ω ● 1.5 1.5 Ω en Wide Band Noise (RMS) IR = 100µA, 10Hz ≤ f ≤ 10kHz 60 120 µV ∆VZ Long Term Stability IR = 100µA, TA = 25°C ± 0.1°C 20 20 ppm/kHr ∆Time
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 2:
All specifications are for TA = 25°C unless otherwise noted. may cause permanent damage to the device. Exposure to any Absolute
Note 3:
Selected devices with guaranteed maximum temperature Maximum Rating condition for extended periods may affect device coefficient are available upon request. reliability and lifetime. For MIL-STD components, please refer to LTC883C data sheet for test listing and parameters. 1004fc For more information www.linear.com/LT1004 3
elecTrical characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. C, I SUFFIXES H SUFFIX SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
VZ Reverse Breakdown Voltage IR = 100µA 1.231 1.235 1.239 2.480 2.500 2.520 V LT1004M: –55°C ≤ TA ≤ 125°C ● 1.220 1.230 1.245 2.460 2.500 2.535 V LT1004C: 0°C ≤ TA ≤ 70°C ● 1.225 1.235 1.245 2.470 2.500 2.530 V LT1004I: –40°C ≤ TA ≤ 85°C ● 1.220 1.230 1.245 2.460 2.500 2.530 V ∆VZ Average Temperature Coefficient IMIN ≤ IR ≤ 20mA (Note 3) 20 20 ppm/°C ∆Temp IMIN Minimum Operating Current ● 8 10 12 20 µA ∆VZ Reverse Breakdown Voltage IMIN ≤ IR ≤ 1mA 1.0 1.0 mV ∆I Change with Current ● 1.5 1.5 mV R 1mA ≤ IR ≤ 20mA 10 10 mV ● 20 20 mV rZ Reverse Dynamic Impedance IR = 100µA 0.2 0.6 0.2 0.6 Ω ● 1.5 1.5 Ω en Wide Band Noise (RMS) IR = 100µA, 10Hz ≤ f ≤ 10kHz 60 120 µV ∆VZ Long Term Stability IR = 100µA, TA = 25°C ± 0.1°C 20 20 ppm/kHr ∆Time
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 2:
All specifications are for TA = 25°C unless otherwise noted. may cause permanent damage to the device. Exposure to any Absolute
Note 3:
Selected devices with guaranteed maximum temperature Maximum Rating condition for extended periods may affect device coefficient are available upon request. reliability and lifetime. For MIL-STD components, please refer to LTC883C data sheet for test listing and parameters. 1004fc For more information www.linear.com/LT1004 3
