Datasheet LTC3410B (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 2.25MHz, 300mA Synchronous Step-Down Regulator in SC70 |
| Pages / Page | 16 / 3 — ELECTRICAL CHARACTERISTICS. The |
| File Format / Size | PDF / 297 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. The
Model Line for this Datasheet
- LTC3410BESC6#PBF LTC3410BESC6#TRMPBF LTC3410BESC6#TRPBF LTC3410BESC6-1.2#PBF LTC3410BESC6-1.2#TRMPBF LTC3410BESC6-1.2#TRPBF LTC3410BESC6-1.5#PBF LTC3410BESC6-1.5#TRMPBF LTC3410BESC6-1.5#TRPBF LTC3410BESC6-1.8#PBF LTC3410BESC6-1.8#TRMPBF LTC3410BESC6-1.8#TRPBF LTC3410BESC6-1.875#PBF LTC3410BESC6-1.875#TRMPBF LTC3410BESC6-1.875#TRPBF
Text Version of Document
LTC3410B
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25
°
C. VIN = 3.6V unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IS Input DC Bias Current (Note 4) Operating VFB = 0.83V or VOUT = 104%, ILOAD = 0A 200 300 µA Shutdown VRUN = 0V 0.1 1 µA fOSC Oscillator Frequency VFB = 0.8V or VOUT = 100% ● 1.8 2.25 2.7 MHz VFB = 0V or VOUT = 0V 310 kHz RPFET RDS(ON) of P-Channel FET ISW = 100mA 0.75 0.9 Ω RNFET RDS(ON) of N-Channel FET ISW = –100mA 0.55 0.7 Ω ILSW SW Leakage VRUN = 0V, VSW = 0V or 5V, VIN = 5V ±0.01 ±1 µA VRUN RUN Threshold ● 0.3 1 1.5 V IRUN RUN Leakage Current ● ±0.01 ±1 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
Dynamic supply current is higher due to the gate charge being may cause permanent damage to the device. Exposure to any Absolute delivered at the switching frequency. Maximum Rating condition for extended periods may affect device
Note 5:
This IC includes overtemperature protection that is intended to reliability and lifetime. protect the device during momentary overload conditions. Junction
Note 2:
The LTC3410BE is guaranteed to meet performance specifications temperature will exceed 125°C when overtemperature protection is active. from 0°C to 85°C. Specifications over the –40°C to 85°C operating Continuous operation above the specified maximum operating junction temperature range are assured by design, characterization and correlation temperature may impair device reliability. with statistical process controls.
Note 3:
TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: LTC3410B: TJ = TA + (PD)(250°C/W)
W U TYPICAL PERFOR A CE CHARACTERISTICS (From Figure 1 Except for the Resistive Divider Resistor Values) Reference Voltage vs Efficiency vs Input Voltage Efficiency vs Output Current Temperature
100 100 0.814 VIN = 3.6V 90 90 IOUT = 100mA 0.809 80 80 IOUT = 250mA 70 0.804 70 60 IOUT = 10mA 60 I 50 0.799 OUT = 1mA 40 50 EFFICIENCY (%) EFFICIENCY (%) 0.794 30 40 REFERENCE VOLTAGE (V) 20 VIN = 2.7V 0.789 30 10 VIN = 3.6V VOUT = 1.2V V V OUT = 1.8V IN = 4.2V 20 0 0.784 2.5 3 3.5 4 4.5 5 5.5 1 10 100 1000 –50 –25 0 25 50 75 100 125 INPUT VOLTAGE (V) OUTPUT CURRENT (mA) TEMPERATURE (°C) 3410 G02 3410 G01 3410 G03 3410bfa 3
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25
°
C. VIN = 3.6V unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IS Input DC Bias Current (Note 4) Operating VFB = 0.83V or VOUT = 104%, ILOAD = 0A 200 300 µA Shutdown VRUN = 0V 0.1 1 µA fOSC Oscillator Frequency VFB = 0.8V or VOUT = 100% ● 1.8 2.25 2.7 MHz VFB = 0V or VOUT = 0V 310 kHz RPFET RDS(ON) of P-Channel FET ISW = 100mA 0.75 0.9 Ω RNFET RDS(ON) of N-Channel FET ISW = –100mA 0.55 0.7 Ω ILSW SW Leakage VRUN = 0V, VSW = 0V or 5V, VIN = 5V ±0.01 ±1 µA VRUN RUN Threshold ● 0.3 1 1.5 V IRUN RUN Leakage Current ● ±0.01 ±1 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
Dynamic supply current is higher due to the gate charge being may cause permanent damage to the device. Exposure to any Absolute delivered at the switching frequency. Maximum Rating condition for extended periods may affect device
Note 5:
This IC includes overtemperature protection that is intended to reliability and lifetime. protect the device during momentary overload conditions. Junction
Note 2:
The LTC3410BE is guaranteed to meet performance specifications temperature will exceed 125°C when overtemperature protection is active. from 0°C to 85°C. Specifications over the –40°C to 85°C operating Continuous operation above the specified maximum operating junction temperature range are assured by design, characterization and correlation temperature may impair device reliability. with statistical process controls.
Note 3:
TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: LTC3410B: TJ = TA + (PD)(250°C/W)
W U TYPICAL PERFOR A CE CHARACTERISTICS (From Figure 1 Except for the Resistive Divider Resistor Values) Reference Voltage vs Efficiency vs Input Voltage Efficiency vs Output Current Temperature
100 100 0.814 VIN = 3.6V 90 90 IOUT = 100mA 0.809 80 80 IOUT = 250mA 70 0.804 70 60 IOUT = 10mA 60 I 50 0.799 OUT = 1mA 40 50 EFFICIENCY (%) EFFICIENCY (%) 0.794 30 40 REFERENCE VOLTAGE (V) 20 VIN = 2.7V 0.789 30 10 VIN = 3.6V VOUT = 1.2V V V OUT = 1.8V IN = 4.2V 20 0 0.784 2.5 3 3.5 4 4.5 5 5.5 1 10 100 1000 –50 –25 0 25 50 75 100 125 INPUT VOLTAGE (V) OUTPUT CURRENT (mA) TEMPERATURE (°C) 3410 G02 3410 G01 3410 G03 3410bfa 3
