Datasheet LTC3410 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 2.25MHz, 300mA Synchronous Step-Down Regulator in SC70 |
| Pages / Page | 16 / 3 — ELECTRICAL CHARACTERISTICS The |
| File Format / Size | PDF / 340 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS The
Model Line for this Datasheet
- LTC3410ESC6#PBF LTC3410ESC6#TRMPBF LTC3410ESC6#TRPBF LTC3410ESC6-1.2#PBF LTC3410ESC6-1.2#TRMPBF LTC3410ESC6-1.2#TRPBF LTC3410ESC6-1.5#PBF LTC3410ESC6-1.5#TRMPBF LTC3410ESC6-1.5#TRPBF LTC3410ESC6-1.65#PBF LTC3410ESC6-1.65#TRMPBF LTC3410ESC6-1.65#TRPBF LTC3410ESC6-1.8#PBF LTC3410ESC6-1.8#TRMPBF LTC3410ESC6-1.8#TRPBF
Text Version of Document
LTC3410
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25
°
C. VIN = 3.6V unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VUVLO Undervoltage Lockout Threshold VIN Rising 2 2.3 V VIN Falling 1.94 V IS Input DC Bias Current (Note 4) Burst Mode® Operation VFB = 0.83V or VOUT = 104%, ILOAD = 0A 26 35 µA Shutdown VRUN = 0V 0.1 1 µA fOSC Oscillator Frequency VFB = 0.8V or VOUT = 100% ● 1.8 2.25 2.7 MHz VFB = 0V or VOUT = 0V 310 kHz RPFET RDS(ON) of P-Channel FET ISW = 100mA 0.75 0.9 Ω RNFET RDS(ON) of N-Channel FET ISW = –100mA 0.55 0.7 Ω ILSW SW Leakage VRUN = 0V, VSW = 0V or 5V, VIN = 5V ±0.01 ±1 µA VRUN RUN Threshold ● 0.3 1 1.5 V IRUN RUN Leakage Current ● ±0.01 ±1 µA Burst Mode is a registered trademark of Linear Technology Corporation.
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
Dynamic supply current is higher due to the gate charge being may cause permanent damage to the device. Exposure to any Absolute delivered at the switching frequency. Maximum Rating condition for extended periods may affect device
Note 5:
This IC includes overtemperature protection that is intended to reliability and lifetime. protect the device during momentary overload conditions. Junction
Note 2:
The LTC3410E is guaranteed to meet performance specifications temperature will exceed 125°C when overtemperature protection is active. from 0°C to 85°C. Specifications over the –40°C to 85°C operating Continuous operation above the specified maximum operating junction temperature range are assured by design, characterization and correlation temperature may impair device reliability. with statistical process controls.
Note 3:
TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: LTC3410: TJ = TA + (PD)(250°C/W)
W U TYPICAL PERFOR A CE CHARACTERISTICS (From Figure1 Except for the Resistive Divider Resistor Values) Efficiency vs Input Voltage Efficiency vs Output Current Efficiency vs Output Current
100 100 100 IOUT = 100mA 90 90 90 80 80 80 IOUT = 10mA 70 70 IOUT = 250mA 60 60 70 IOUT = 1mA 50 50 60 40 40 EFFFICIENCY (%) EFFICIENCY (%) EFFICIENCY (%) 50 IOUT = 0.1mA 30 30 20 VIN = 2.7V 20 VIN = 2.7V 40 VIN = 3.6V VIN = 3.6V 10 V 10 V V IN = 4.2V IN = 4.2V OUT = 1.8V VOUT = 1.8V VOUT = 1.2V 30 0 0 2.5 3 3.5 4 4.5 5 5.5 0.1 1 10 100 1000 0.1 1 10 100 1000 INPUT VOLTAGE (V) OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) 3410 G02 3410 G03 3410 G04 3410fb 3
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25
°
C. VIN = 3.6V unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VUVLO Undervoltage Lockout Threshold VIN Rising 2 2.3 V VIN Falling 1.94 V IS Input DC Bias Current (Note 4) Burst Mode® Operation VFB = 0.83V or VOUT = 104%, ILOAD = 0A 26 35 µA Shutdown VRUN = 0V 0.1 1 µA fOSC Oscillator Frequency VFB = 0.8V or VOUT = 100% ● 1.8 2.25 2.7 MHz VFB = 0V or VOUT = 0V 310 kHz RPFET RDS(ON) of P-Channel FET ISW = 100mA 0.75 0.9 Ω RNFET RDS(ON) of N-Channel FET ISW = –100mA 0.55 0.7 Ω ILSW SW Leakage VRUN = 0V, VSW = 0V or 5V, VIN = 5V ±0.01 ±1 µA VRUN RUN Threshold ● 0.3 1 1.5 V IRUN RUN Leakage Current ● ±0.01 ±1 µA Burst Mode is a registered trademark of Linear Technology Corporation.
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
Dynamic supply current is higher due to the gate charge being may cause permanent damage to the device. Exposure to any Absolute delivered at the switching frequency. Maximum Rating condition for extended periods may affect device
Note 5:
This IC includes overtemperature protection that is intended to reliability and lifetime. protect the device during momentary overload conditions. Junction
Note 2:
The LTC3410E is guaranteed to meet performance specifications temperature will exceed 125°C when overtemperature protection is active. from 0°C to 85°C. Specifications over the –40°C to 85°C operating Continuous operation above the specified maximum operating junction temperature range are assured by design, characterization and correlation temperature may impair device reliability. with statistical process controls.
Note 3:
TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: LTC3410: TJ = TA + (PD)(250°C/W)
W U TYPICAL PERFOR A CE CHARACTERISTICS (From Figure1 Except for the Resistive Divider Resistor Values) Efficiency vs Input Voltage Efficiency vs Output Current Efficiency vs Output Current
100 100 100 IOUT = 100mA 90 90 90 80 80 80 IOUT = 10mA 70 70 IOUT = 250mA 60 60 70 IOUT = 1mA 50 50 60 40 40 EFFFICIENCY (%) EFFICIENCY (%) EFFICIENCY (%) 50 IOUT = 0.1mA 30 30 20 VIN = 2.7V 20 VIN = 2.7V 40 VIN = 3.6V VIN = 3.6V 10 V 10 V V IN = 4.2V IN = 4.2V OUT = 1.8V VOUT = 1.8V VOUT = 1.2V 30 0 0 2.5 3 3.5 4 4.5 5 5.5 0.1 1 10 100 1000 0.1 1 10 100 1000 INPUT VOLTAGE (V) OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) 3410 G02 3410 G03 3410 G04 3410fb 3
