Datasheet 2N6071, 2N6073, 2N6075 (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | Sensitive Gate Triac 4.0 Amps, 200 thru 600 Volts |
| Pages / Page | 3 / 1 — 2N6071, A, B. 2N6073, A, B 2N6075, A, B. SENSITIVE GATE TRIAC. 4.0 AMPS, … |
| File Format / Size | PDF / 153 Kb |
| Document Language | English |
2N6071, A, B. 2N6073, A, B 2N6075, A, B. SENSITIVE GATE TRIAC. 4.0 AMPS, 200 THRU 600 VOLTS. DESCRIPTION:
Model Line for this Datasheet
Text Version of Document
2N6071, A, B
CentralTM
2N6073, A, B 2N6075, A, B
Semiconductor Corp.
SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls and power supplies.
MARKING CODE: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS:
(TJ=25°C unless otherwise noted)
2N6071 2N6073 2N6075 2N6071A 2N6073A 2N6075A SYMBOL 2N6071B 2N6073B 2N6075B UNITS
Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 V RMS On-State Current (TC=85°C) IT(RMS) 4.0 A Peak One Cycle Surge (60Hz, TJ=110°C) ITSM 30 A I2t Value for Fusing (t=8.3ms) I2t 3.7 A2s Peak Gate Power (TC=85°C) PGM 10 W Average Gate Power (t=8.3ms, TC=85°C) PG(AV) 0.5 W Peak Gate Voltage (TC=85°C) VGM 5.0 V Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +110 °C Thermal Resistance ΘJC 3.5 °C/W Thermal Resistance ΘJA 75 °C/W Maximum Lead Temperature TL 260 °C
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
A Series B Series SYMBOL TEST CONDITIONS TYP MAX TYP MAX TYP MAX UNITS
IDRM, IRRM VD=Rated VDRM, VRRM, TJ=25°C 10 10 10 µA IDRM, IRRM VD=Rated VDRM, VRRM, TJ=110°C 2.0 2.0 2.0 mA IGT VD=12V, RL=100Ω, QUAD I, TJ=25°C 30 5.0 3.0 mA IGT VD=12V, RL=100Ω, QUAD II, TJ=25°C - 5.0 3.0 mA IGT VD=12V, RL=100Ω, QUAD III, TJ=25°C 30 5.0 3.0 mA IGT VD=12V, RL=100Ω, QUAD IV, TJ=25°C - 10 5.0 mA IGT VD=12V, RL=100Ω, QUAD I, TJ= -40°C 60 20 15 mA IGT VD=12V, RL=100Ω, QUAD II, TJ= -40°C - 20 15 mA IGT VD=12V, RL=100Ω, QUAD III, TJ= -40°C 60 20 15 mA IGT VD=12V, RL=100Ω, QUAD IV, TJ= -40°C - 30 20 mA IH VD=12V, IT=1.0A, TJ=25°C 30 15 15 mA IH VD=12V, IT=1.0A, TJ= -40°C 70 30 30 mA VGT VD=12V, RL=100Ω, TJ=25°C, QUAD I, II, III, IV 2.0 2.0 2.0 V VGT VD=12V, RL=100Ω, TJ= -40°C, QUAD I, II, III, IV 2.5 2.5 2.5 V VTM ITM=6.0A 2.0 2.0 2.0 V ton ITM=14A, IGT=100mA 1.5 1.5 1.5 µs dv/dt VD= Rated VDRM, ITM=5.7A, TJ=85°C 5.0 5.0 5.0 V/µs R0 (27-April 2004)
CentralTM
2N6073, A, B 2N6075, A, B
Semiconductor Corp.
SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls and power supplies.
MARKING CODE: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS:
(TJ=25°C unless otherwise noted)
2N6071 2N6073 2N6075 2N6071A 2N6073A 2N6075A SYMBOL 2N6071B 2N6073B 2N6075B UNITS
Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 V RMS On-State Current (TC=85°C) IT(RMS) 4.0 A Peak One Cycle Surge (60Hz, TJ=110°C) ITSM 30 A I2t Value for Fusing (t=8.3ms) I2t 3.7 A2s Peak Gate Power (TC=85°C) PGM 10 W Average Gate Power (t=8.3ms, TC=85°C) PG(AV) 0.5 W Peak Gate Voltage (TC=85°C) VGM 5.0 V Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +110 °C Thermal Resistance ΘJC 3.5 °C/W Thermal Resistance ΘJA 75 °C/W Maximum Lead Temperature TL 260 °C
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
A Series B Series SYMBOL TEST CONDITIONS TYP MAX TYP MAX TYP MAX UNITS
IDRM, IRRM VD=Rated VDRM, VRRM, TJ=25°C 10 10 10 µA IDRM, IRRM VD=Rated VDRM, VRRM, TJ=110°C 2.0 2.0 2.0 mA IGT VD=12V, RL=100Ω, QUAD I, TJ=25°C 30 5.0 3.0 mA IGT VD=12V, RL=100Ω, QUAD II, TJ=25°C - 5.0 3.0 mA IGT VD=12V, RL=100Ω, QUAD III, TJ=25°C 30 5.0 3.0 mA IGT VD=12V, RL=100Ω, QUAD IV, TJ=25°C - 10 5.0 mA IGT VD=12V, RL=100Ω, QUAD I, TJ= -40°C 60 20 15 mA IGT VD=12V, RL=100Ω, QUAD II, TJ= -40°C - 20 15 mA IGT VD=12V, RL=100Ω, QUAD III, TJ= -40°C 60 20 15 mA IGT VD=12V, RL=100Ω, QUAD IV, TJ= -40°C - 30 20 mA IH VD=12V, IT=1.0A, TJ=25°C 30 15 15 mA IH VD=12V, IT=1.0A, TJ= -40°C 70 30 30 mA VGT VD=12V, RL=100Ω, TJ=25°C, QUAD I, II, III, IV 2.0 2.0 2.0 V VGT VD=12V, RL=100Ω, TJ= -40°C, QUAD I, II, III, IV 2.5 2.5 2.5 V VTM ITM=6.0A 2.0 2.0 2.0 V ton ITM=14A, IGT=100mA 1.5 1.5 1.5 µs dv/dt VD= Rated VDRM, ITM=5.7A, TJ=85°C 5.0 5.0 5.0 V/µs R0 (27-April 2004)
