Datasheet IRF820, SiHF820 (Vishay) - 2

IRF820, SiHF820
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W Maximum Junction-to-Case (Drain) RthJC - 2.5
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.5 Ab - - 3.0 Forward Transconductance gfs VDS = 50 V, ID = 1.5 A 1.5 - - S
Dynamic
Input Capacitance Ciss - 360 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 92 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 37 - Total Gate Charge Qg - - 24 I Gate-Source Charge Qgs V D = 2.1 A, VDS = 400 V, GS = 10 V - - 3.3 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 13 Turn-On Delay Time td(on) - 8.0 - Rise Time tr V - 8.6 - DD = 250 V, ID = 2.1 A, ns Rg = 18 , RD = 100 , see fig. 10b Turn-Off Delay Time td(off) - 33 - Fall Time tf - 16 - Between lead, D Internal Drain Inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance LS - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 2.5 showing the integral reverse A G Pulsed Diode Forward Currenta I p - n junction diode SM - - 8.0 S Body Diode Voltage VSD TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb - - 1.6 V Body Diode Reverse Recovery Time trr - 260 520 ns TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/s Body Diode Reverse Recovery Charge Qrr - 0.7 1.4 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com Document Number: 91059 2 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000