Datasheet TCR8BM (Toshiba)
Manufacturer | Toshiba |
Description | Low Dropout (LDO) Linear Voltage Regulator |
Pages / Page | 11 / 1 — TCR8BM series. 800 mA CMOS Ultra Low Dropout Regulator. Features |
File Format / Size | PDF / 722 Kb |
Document Language | English |
TCR8BM series. 800 mA CMOS Ultra Low Dropout Regulator. Features
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TCR8BM series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR8BM series 800 mA CMOS Ultra Low Dropout Regulator
The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that al ows ultra low dropout of 170 mV (Typ.) at IOUT = 800 mA ( 1.1 V output, VBIAS = 3.3 V ). These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V, and capable of driving up to 800 mA. Other features include overcurrent protection, thermal shutdown, and Auto-discharge. The TCR8BM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As smal ceramic input and output capacitors can be used with the TCR8BM series, these devices are ideal for portable applications that require DFN5B high-density board assembly such as cellular phones. Weight
:
1.4 mg ( Typ.)
Features
• Low dropout voltage VDO = 170 mV (Typ.) at 1.1 V output, VBIAS = 3.3 V , IOUT = 800 mA • Low stand-by current ( IBIAS(OFF) = 1 μA (Max)) • Low quiescent bias current ( IBIAS(ON) = 20 μA (Typ.) at VBIAS = 5.5 V, IOUT = 0 mA ) • Wide range output voltage line up ( VOUT = 0.8 to 3.6 V ) • Overcurrent protection • Thermal shutdown • Inrush current reduction • Under voltage lockout (TCR8BMxxA products) • Auto-discharge • Pull down connection between CONTROL and GND • Ultra small package DFN5B (1.2 mm x 1.2 mm ; t 0.38 mm ) Start of commercial production 2018-08 © 2018-2019 1 2019-01-15 Toshiba Electronic Devices & Storage Corporation