Datasheet 2N5210/MMBT5210 (ON Semiconductor) - 5

(continued) Typical Characteristics (continued) Input and Output Capacitance
vs Reverse Bias Voltage Contours of Constant Gain
Bandwidth Product (f T )
V CE -COLLECTOR VOLTAGE (V) 5 CAPACITANCE (pF) f = 1.0 MHz
4
3
C te 2
C ob 1 0 4 8
12
16
REVERSE BIAS VOLTAGE (V) 175 MHz 7
5 150 MHz 3
2 125 MHz
100 MHz
75 MHz 1
0.1 20 Normalized Collector-Cutoff Current
vs Ambient Temperature ° 1000 100 5
V CE = 5.0 V 100 10 1
25 50
75
100
125
T A -AMBIE NT TEMPERATURE ( °C) 150 4 BANDWIDTH = 15.7 kHz I C = 30 µA 2
1 I C = 10 µA 0 1,000 PD -POWER DISSIPATION (W) I C = 1.0 mA,
R S = 500 Ω
I C = 1.0 mA,
Ω
R S = 5.0 kΩ 2
V CE = 5.0V
0
0.0001 0.001 0.01
0.1
1
f -FREQUENCY (MHz) 10,000 20,000 50,000 100,000 1.00 I C = 100 µA,
Ω
R S = 10 kΩ 4 5,000 Base-Emitter Saturation
Voltage vs Collector Current I C = 200 µA,
Ω
R S = 10 kΩ 6 2,000 R S -SOURCE RESISTANCE (Ω ) Noise Figure vs Frequency 8 3 I C = 100 µA 3 10
NF -NOISE FIGURE (dB) 1
10
I C -COLLECTOR CURRENT (mA) Wideband Noise Frequency
vs Source Resistance
NF -NOISE FIGURE (dB) CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C 0 10 2N5210/MMBT5210 NPN General Purpose Amplifier 10 100 0.75 TO-92
0.50 SOT-23
0.25 0.00
0 25 50 75 100
o TEMPERATURE ( C) 125 150