Datasheet MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | Dual General Purpose Transistors |
| Pages / Page | 8 / 1 — www.onsemi.com. MARKING DIAGRAM. SOT−363/SC−88/. SC70−6. CASE 419B. … |
| Revision | 11 |
| File Format / Size | PDF / 99 Kb |
| Document Language | English |
www.onsemi.com. MARKING DIAGRAM. SOT−363/SC−88/. SC70−6. CASE 419B. Features. MBT3904DW1T1. MAXIMUM RATINGS. STYLE 1. Rating. Symbol. Value
Model Line for this Datasheet
Text Version of Document
link to page 1 MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose Transistors
www.onsemi.com
The MBT3904DW1 and MBT3904DW2 devices are a spin−off of
MARKING DIAGRAM
our popular SOT−23/SOT−323 three−leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in
SOT−363/SC−88/
XX MG 6
SC70−6
one package, this device is ideal for low−power surface mount G
CASE 419B
applications where board space is at a premium. 1 1
Features
• XX = MA for MBT3904DW1T1G hFE, 100−300 • MJ for MBT3904DW2T1G Low VCE(sat), ≤ 0.4 V M = Date Code • Simplifies Circuit Design G = Pb−Free Package • (Note: Microdot may be in either location) Reduces Board Space • Reduces Component Count (3) (2) (1) • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q1 Q2 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant
MBT3904DW1T1 MAXIMUM RATINGS STYLE 1 Rating Symbol Value Unit
(3) (2) (1) Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage V Q2 CBO 60 Vdc Q1 Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc (4) (5) (6) Electrostatic Discharge ESD HBM Class 2 MM Class B
MBT3904DW2T1 STYLE 27
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected.
Device Package Shipping
†
THERMAL CHARACTERISTICS
MBT3904DW1T1G, SOT−363 3000 /
Characteristic Symbol Max Unit
MBT3904DW2T1G (Pb−Free) Tape & Reel Total Package Dissipation (Note 1) PD 150 mW T SMBT3904DW1T1G SOT−363 3000 / A = 25°C (Pb−Free) Tape & Reel Thermal Resistance, RqJA 833 °C/W Junction−to−Ambient NSVMBT3904DW1T3G SOT−363 10000 / (Pb−Free) Tape & Reel Junction and Storage TJ, Tstg − 55 to +150 °C Temperature Range †For information on tape and reel specifications, 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum including part orientation and tape sizes, please recommended footprint. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
June, 2015 − Rev. 11 MBT3904DW1T1/D
www.onsemi.com
The MBT3904DW1 and MBT3904DW2 devices are a spin−off of
MARKING DIAGRAM
our popular SOT−23/SOT−323 three−leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in
SOT−363/SC−88/
XX MG 6
SC70−6
one package, this device is ideal for low−power surface mount G
CASE 419B
applications where board space is at a premium. 1 1
Features
• XX = MA for MBT3904DW1T1G hFE, 100−300 • MJ for MBT3904DW2T1G Low VCE(sat), ≤ 0.4 V M = Date Code • Simplifies Circuit Design G = Pb−Free Package • (Note: Microdot may be in either location) Reduces Board Space • Reduces Component Count (3) (2) (1) • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q1 Q2 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant
MBT3904DW1T1 MAXIMUM RATINGS STYLE 1 Rating Symbol Value Unit
(3) (2) (1) Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage V Q2 CBO 60 Vdc Q1 Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc (4) (5) (6) Electrostatic Discharge ESD HBM Class 2 MM Class B
MBT3904DW2T1 STYLE 27
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected.
Device Package Shipping
†
THERMAL CHARACTERISTICS
MBT3904DW1T1G, SOT−363 3000 /
Characteristic Symbol Max Unit
MBT3904DW2T1G (Pb−Free) Tape & Reel Total Package Dissipation (Note 1) PD 150 mW T SMBT3904DW1T1G SOT−363 3000 / A = 25°C (Pb−Free) Tape & Reel Thermal Resistance, RqJA 833 °C/W Junction−to−Ambient NSVMBT3904DW1T3G SOT−363 10000 / (Pb−Free) Tape & Reel Junction and Storage TJ, Tstg − 55 to +150 °C Temperature Range †For information on tape and reel specifications, 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum including part orientation and tape sizes, please recommended footprint. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
June, 2015 − Rev. 11 MBT3904DW1T1/D
