Datasheet MPSA63, MMBTA63, PZTA63 (ON Semiconductor) - 3

Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics
ICBO Collector-Emitter Breakdown Voltage IC = -100μA, IB = 0
Collector-Cutoff Current
VCB = -30V, IE = 0 IEBO Emitter-Cutoff Current BV(BR)CES -30 VEB = -10V, IC = 0 V
-100 nA -100 nA On Characteristics *
5,000
10,000 DC Current Gain IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V VCE(sat) Collector-Emitter Saturation Voltage IC = -100mA, IB = -0.1mA -1.5 V VBE(on) Base-Emitter On Voltage IC = -100mA, VCE = -5.0V -2.0 V hFE Small Signal Characteristics
Current Gain -Bandwidth Product fT IC = -10mA, VCE = -5.0V,
f = 100MHz 125 MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Typical Pulsed Current Gain
vs Collector Current VCESAT -COLLECTOR EM ITTE R VOLTAGE (V) h FE-TYPICAL PULSED CURRENT GAIN (K) Typical Performance Characteristics 50
VCE = 5V
40
30 125 °C 20 25 °C 10 -40 °C 0
0.01 0.1
I C -COLLECTOR CURRENT (A) 1 Figure 1. Typical Pulsed Current Gain
vs Collector Current 1.6 β
β = 1000
1.2
-40 °C 0.8
25 °C
125 °C 0.4 0
0.001 0.01
0.1
I C -COLLECTOR CURRENT (A) 1 Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current © 2010 Fairchild Semiconductor Corporation
MPSA63 / MMBTA63 / PZTA63 Rev. A1 Collector-Emitter Saturation
Voltage vs Collector Current www.fairchildsemi.com
2 MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor Electrical Characteristics