Datasheet ZTX749 (Diodes) - 2

PNP SILICON PLANAR ZTX749 MEDIUM POWER TRANSISTOR ZTX749 ISSUE 1 – APRIL 94 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). FEATURES PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 25 Volt VCEO * 2 Amp continuous current Transition fT 100 160 MHz IC=-100mA, * Low saturation voltage Frequency VCE=-5V f=100MHz Output Cpacitance C C obo 55 100 pF VCB=-10V f=1MHz B E Switching Times ton 40 ns IC=-500mA, E-Line VCC=-10V TO92 Compatible toff 450 ns IB1=IB2=-50mA ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current I THERMAL CHARACTERISTICS CM -6 A Continuous Collector Current IC -2 A PARAMETER SYMBOL MAX. UNIT Power Dissipation at Tamb=25°C Ptot 1 W derate above 25°C 5.7 mW/ °C Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 °C/W Junction to Ambient R 116 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C 2 th(j-amb)2 † Junction to Case Rth(j-case) 70 °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V(BR)CBO -35 V IC=-100µA, IE=0 Breakdown Voltage Collector-Emitter V(BR)CEO -25 V IC=-10mA, IB=0* Breakdown Voltage 2.5 200 Emitter-Base V(BR)EBO -5 V IE=-100µA, IC=0 tts) D=1 (D.C.) a Breakdown Voltage W W 2.0 t1 D=t1/tP ( °C/ - Case temperature Collector Cut-Off ICBO -0.1 µA VCB=-30V n oi 1.5 nce ( tP Current -10 µA VCB=-30V,Tamb=100°C ta 100 sipat D=0.5 Emitter Cut-Off Current I is Ambient temperat esis EBO -0.1 µA VEB=-4V, IE=0 1.0 Dr l R a D=0.2 Collector-Emitter VCE(sat) -0.12 -0.3 V IC=1A, IB=-100mA* we 0.5 ur rm e e D=0.1 Saturation Voltage -0.23 -0.5 V IC=2A, IB=-200mA* h Single Pulse ax Po T M 0 0 Base-Emitter VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Saturation Voltage T -Temperature (°C) Pulse Width (seconds) Base-Emitter VBE(on) -0.8 -1 V IC=-1A, VCE=-2V*
Derating curve Maximum transient thermal impedance
Turn-On Voltage Static Forward Current hFE 70 200 IC=-50mA, VCE=-2V* Transfer Ratio 100 200 300 IC=-1A, VCE=-2V* 75 150 IC=-2A, VCE=-2V* 15 50 IC=-6A, VCE=-2V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-255 3-254