Datasheet DGTD120T25S1PT (Diodes) - 3
| Manufacturer | Diodes |
| Description | 1200V Field Stop IGBT |
| Pages / Page | 10 / 3 — DGTD120T25S1PT. Electrical Characteristics. Parameter. Symbol. Min. Typ. … |
| File Format / Size | PDF / 1.7 Mb |
| Document Language | English |
DGTD120T25S1PT. Electrical Characteristics. Parameter. Symbol. Min. Typ. Max. Unit. Condition. STATIC CHARACTERISTICS
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DGTD120T25S1PT Electrical Characteristics
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 1200 – – V IC = 500µA, VGE = 0V T – vj = 25°C 2.00 2.40 Collector-Emitter Saturation Voltage Tvj = 150°C VCE(sat) – 2.40 – V IC = 25A, VGE = 15V Tvj = 175°C – 2.50 – T – 2.10 2.60 Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 12.5A Tvj = 175°C – 1.90 – Tvj = 25°C – 2.50 3.00 Diode Forward Voltage Tvj = 150°C VF – 2.55 – V VGE = 0V, IF = 25A Tvj = 175°C – 2.45 – Gate-Emitter Threshold Voltage VGE(th) 5.0 6.0 7.0 V VCE = VGE, IC = 0.85mA T – – 250 Zero Gate Voltage Collector Current vj = 25°C ICES µA Tvj = 175°C – – 2500 VCE = 1200V, VGE = 0V Gate-Emitter Leakage Current IGES – – ±250 nA VGE = 20V, VCE = 0V Transconductance gfs – 16 – S VCE = 20V, IC = 25A
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 204 – Gate-Emitter Charge Qge – 34 – nC VCE = 960V, IC = 25A, VGE = 15V Gate-Collector Charge Qgc – 94 – Input Capacitance Cies – 3942 – V Reverse Transfer Capacitance Cres – 72 – pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes – 142 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH – Short Circuit Collector Current Max. 1000 Short VGE = 15V, VCC = 600V, IC(SC) – 121 – A Circuits. Time Between Short Circuits ≥ 1.0s tSC ≤ 10µs, Tvj = 175°C
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 73 – Rise time tr – 41 – ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) – 269 – IC = 25A, RG = 23Ω, Fall Time tf – 39 – Inductive Load, Turn-on Switching Energy Eon – 1.44 – Tvj = 25°C Turn-off Switching Energy Eoff – 0.55 – mJ Total Switching Energy Ets – 1.99 – Reverse Recovery Time trr – 100 – ns IF = 25A, diF/dt = 500A/µs, Reverse Recovery Current Irr – 17 – A VR = 600V, Reverse Recovery Charge Qrr – 0.85 – µC Tvj = 25°C Rate Of Fall Of Reverse Current During tb dirr/dt – -376 – A/µs Turn-on Delay Time td(on) – 65 – Rise time tr – 45 – ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) – 292 – IC = 25A, RG = 23Ω, Fall Time tf – 75 – Inductive Load, Turn-on Switching Energy Eon – 2.43 – Tvj = 175°C Turn-off Switching Energy Eoff – 1.09 – mJ Total Switching Energy Ets – 3.52 – Reverse Recovery Time trr – 150 – ns IF = 25A, diF/dt = 500A/µs, Reverse Recovery Current Irr – 25 – A VR = 600V, Reverse Recovery Charge Qrr – 1.85 – µC Tvj = 175°C Rate Of Fall Of Reverse Current During tb dirr/dt – -374 – A/µs DGTD120T25S1PT 3 of 10 March 2018 Document Number DS39659 Rev. 1 - 2
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(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 1200 – – V IC = 500µA, VGE = 0V T – vj = 25°C 2.00 2.40 Collector-Emitter Saturation Voltage Tvj = 150°C VCE(sat) – 2.40 – V IC = 25A, VGE = 15V Tvj = 175°C – 2.50 – T – 2.10 2.60 Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 12.5A Tvj = 175°C – 1.90 – Tvj = 25°C – 2.50 3.00 Diode Forward Voltage Tvj = 150°C VF – 2.55 – V VGE = 0V, IF = 25A Tvj = 175°C – 2.45 – Gate-Emitter Threshold Voltage VGE(th) 5.0 6.0 7.0 V VCE = VGE, IC = 0.85mA T – – 250 Zero Gate Voltage Collector Current vj = 25°C ICES µA Tvj = 175°C – – 2500 VCE = 1200V, VGE = 0V Gate-Emitter Leakage Current IGES – – ±250 nA VGE = 20V, VCE = 0V Transconductance gfs – 16 – S VCE = 20V, IC = 25A
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 204 – Gate-Emitter Charge Qge – 34 – nC VCE = 960V, IC = 25A, VGE = 15V Gate-Collector Charge Qgc – 94 – Input Capacitance Cies – 3942 – V Reverse Transfer Capacitance Cres – 72 – pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes – 142 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH – Short Circuit Collector Current Max. 1000 Short VGE = 15V, VCC = 600V, IC(SC) – 121 – A Circuits. Time Between Short Circuits ≥ 1.0s tSC ≤ 10µs, Tvj = 175°C
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 73 – Rise time tr – 41 – ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) – 269 – IC = 25A, RG = 23Ω, Fall Time tf – 39 – Inductive Load, Turn-on Switching Energy Eon – 1.44 – Tvj = 25°C Turn-off Switching Energy Eoff – 0.55 – mJ Total Switching Energy Ets – 1.99 – Reverse Recovery Time trr – 100 – ns IF = 25A, diF/dt = 500A/µs, Reverse Recovery Current Irr – 17 – A VR = 600V, Reverse Recovery Charge Qrr – 0.85 – µC Tvj = 25°C Rate Of Fall Of Reverse Current During tb dirr/dt – -376 – A/µs Turn-on Delay Time td(on) – 65 – Rise time tr – 45 – ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) – 292 – IC = 25A, RG = 23Ω, Fall Time tf – 75 – Inductive Load, Turn-on Switching Energy Eon – 2.43 – Tvj = 175°C Turn-off Switching Energy Eoff – 1.09 – mJ Total Switching Energy Ets – 3.52 – Reverse Recovery Time trr – 150 – ns IF = 25A, diF/dt = 500A/µs, Reverse Recovery Current Irr – 25 – A VR = 600V, Reverse Recovery Charge Qrr – 1.85 – µC Tvj = 175°C Rate Of Fall Of Reverse Current During tb dirr/dt – -374 – A/µs DGTD120T25S1PT 3 of 10 March 2018 Document Number DS39659 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated
