Datasheet DGTD65T15H2TF (Diodes) - 4
| Manufacturer | Diodes |
| Description | 650V Field Stop IGBT |
| Pages / Page | 9 / 4 — DGTD65T15H2TF. Electrical Characteristics. Parameter. Symbol. Min. Typ. … |
| File Format / Size | PDF / 1.8 Mb |
| Document Language | English |
DGTD65T15H2TF. Electrical Characteristics. Parameter. Symbol. Min. Typ. Max. Unit. Condition. STATIC CHARACTERISTICS
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DGTD65T15H2TF Electrical Characteristics
(@Tj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 — — V IC = 2mA, VGE = 0V T — 1.65 2.00 Collector-Emitter Saturation Voltage j = +25°C VCE(sat) V IC = 15A, VGE = 15V Tj = +175°C — 1.90 — T — 1.85 2.30 Diode Forward Voltage j = +25°C VF V VGE = 0V, IF = 15A Tj = +175°C — 1.95 — Gate-Emitter Threshold Voltage VGE(th) 4.5 5.5 6.5 V VCE = VGE, IC = 0.5mA — — V I CE = 650V, VGE = 0V, CES 20 µA Zero Gate Voltage Collector Current Tj = +25°C Gate-Emitter Leakage Current IGES — — ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg — 61 — Gate-Emitter Charge Qge — 11 — nC VCE = 520V, IC = 15A, VGE = 15V Gate-Collector Charge Qgc — 35 — Input Capacitance Cies — 1129 — V Reverse Transfer Capacitance Cres — 57 — pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes — 31 —
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(on) — 19 — Rise Time tr — 27 — ns VGE = 15V, VCC = 400V, Turn-Off Delay Time td(off) — 128 — IC = 15A, RG = 10Ω, Fall Time tf — 32 — Inductive Load, Turn-On Switching Energy Eon — 270 — Tj = +25°C Turn-Off Switching Energy E µJ off — 86 — Total Switching Energy Ets — 356 — Turn-On Delay Time td(on) — 17 — Rise Time tr — 29 — ns VGE = 15V, VCC = 400V, Turn-Off Delay Time td(off) — 150 — IC = 15A, RG = 10Ω, Fall Time tf — 130 — Inductive Load, Turn-On Switching Energy Eon — 342 — Tj = +175°C Turn-Off Switching Energy Eoff — 288 — µJ Total Switching Energy Ets — 630 — Reverse Recovery Time trr — 150 — ns IF = 15A, diF/dt = 200A/µs, Reverse Recovery Current Irr — 5.2 — A Tj = +25°C Reverse Recovery Charge Qrr — 390 — nC Reverse Recovery Time trr — 207 — ns IF = 15A, diF/dt = 200A/µs, Reverse Recovery Current Irr — 6.1 — A Tj = +175°C Reverse Recovery Charge Qrr — 631 — nC DGTD65T15H2TF 4 of 9 June 2018 Document Number DS39649 Rev. 4 - 2
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© Diodes Incorporated Document Outline Features Description Mechanical Data Characteristic Symbol Value Unit Characteristic Applications Ordering Information (Note 4) Marking Information Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (continued) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (cont.) Package Outline Dimensions
(@Tj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 — — V IC = 2mA, VGE = 0V T — 1.65 2.00 Collector-Emitter Saturation Voltage j = +25°C VCE(sat) V IC = 15A, VGE = 15V Tj = +175°C — 1.90 — T — 1.85 2.30 Diode Forward Voltage j = +25°C VF V VGE = 0V, IF = 15A Tj = +175°C — 1.95 — Gate-Emitter Threshold Voltage VGE(th) 4.5 5.5 6.5 V VCE = VGE, IC = 0.5mA — — V I CE = 650V, VGE = 0V, CES 20 µA Zero Gate Voltage Collector Current Tj = +25°C Gate-Emitter Leakage Current IGES — — ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg — 61 — Gate-Emitter Charge Qge — 11 — nC VCE = 520V, IC = 15A, VGE = 15V Gate-Collector Charge Qgc — 35 — Input Capacitance Cies — 1129 — V Reverse Transfer Capacitance Cres — 57 — pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes — 31 —
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(on) — 19 — Rise Time tr — 27 — ns VGE = 15V, VCC = 400V, Turn-Off Delay Time td(off) — 128 — IC = 15A, RG = 10Ω, Fall Time tf — 32 — Inductive Load, Turn-On Switching Energy Eon — 270 — Tj = +25°C Turn-Off Switching Energy E µJ off — 86 — Total Switching Energy Ets — 356 — Turn-On Delay Time td(on) — 17 — Rise Time tr — 29 — ns VGE = 15V, VCC = 400V, Turn-Off Delay Time td(off) — 150 — IC = 15A, RG = 10Ω, Fall Time tf — 130 — Inductive Load, Turn-On Switching Energy Eon — 342 — Tj = +175°C Turn-Off Switching Energy Eoff — 288 — µJ Total Switching Energy Ets — 630 — Reverse Recovery Time trr — 150 — ns IF = 15A, diF/dt = 200A/µs, Reverse Recovery Current Irr — 5.2 — A Tj = +25°C Reverse Recovery Charge Qrr — 390 — nC Reverse Recovery Time trr — 207 — ns IF = 15A, diF/dt = 200A/µs, Reverse Recovery Current Irr — 6.1 — A Tj = +175°C Reverse Recovery Charge Qrr — 631 — nC DGTD65T15H2TF 4 of 9 June 2018 Document Number DS39649 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features Description Mechanical Data Characteristic Symbol Value Unit Characteristic Applications Ordering Information (Note 4) Marking Information Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (continued) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (cont.) Package Outline Dimensions
