Datasheet 7UL1G126FS (Toshiba) - 2 Manufacturer Toshiba Description Single Bus Buffer (3-State). L-MOS LVP series Pages / Page 11 / 2 — 7UL1G126FS. 5. IEC. Logic. Symbol. 6. Truth. Table. G. A. Y. L. X. Z. H. … File Format / Size PDF / 194 Kb Document Language English
7UL1G126FS. 5. IEC. Logic. Symbol. 6. Truth. Table. G. A. Y. L. X. Z. H. L. L. H. H. H. X:. Don't. care. Z:. High. impedance. 7. Absolute. Maximum. Ratings. (Note). (Unless. otherwise
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Model Line for this Datasheet Text Version of Document 7UL1G126FS 5. IEC Logic Symbol 6. Truth Table G A Y L X Z H L L H H H X: Don't care Z: High impedance 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 4.6 V Input voltage VIN -0.5 to 4.6 V DC output voltage VOUT (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 Input diode current IIK -20 mA Output diode current IOK (Note 3) -20 mA DC output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0 V or high impedance condition Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND ©2018 2 2018-06-07 Toshiba Electronic Devices & Storage Corporation Rev.2.0