Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 2

ManufacturerON Semiconductor
DescriptionNPN and PNP Bipolar Transistor
Pages / Page13 / 2 — MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, …
Revision9
File Format / SizePDF / 132 Kb
Document LanguageEnglish

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, PNP. ELECTRICAL CHARACTERISTICS. Characteristic

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS Characteristic

Model Line for this Datasheet

Text Version of Document

link to page 2 link to page 2
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MMBT3904WT1, SMMBT3904WT1 40 − (IC = −1.0 mAdc, IB = 0) MMBT3906WT1, SMMBT3906WT1 −40 − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 mAdc, IE = 0) MMBT3904WT1, SMMBT3904WT1 60 − (IC = −10 mAdc, IE = 0) MMBT3906WT1, SMMBT3906WT1 −40 − Emitter − Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 mAdc, IC = 0) MMBT3904WT1, SMMBT3904WT1 6.0 − (IE = −10 mAdc, IC = 0) MMBT3906WT1, SMMBT3906WT1 −5.0 − Base Cutoff Current IBL nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 − −50 Collector Cutoff Current ICEX nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 − −50
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − (IC = −0.1 mAdc, VCE = −1.0 Vdc) MMBT3906WT1, SMMBT3906WT1 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 (IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base − Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95 (IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
www.onsemi.com 2