Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 2
Manufacturer | ON Semiconductor |
Description | NPN and PNP Bipolar Transistor |
Pages / Page | 13 / 2 — MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, … |
Revision | 9 |
File Format / Size | PDF / 132 Kb |
Document Language | English |
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, PNP. ELECTRICAL CHARACTERISTICS. Characteristic
Model Line for this Datasheet
Text Version of Document
link to page 2 link to page 2
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MMBT3904WT1, SMMBT3904WT1 40 − (IC = −1.0 mAdc, IB = 0) MMBT3906WT1, SMMBT3906WT1 −40 − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 mAdc, IE = 0) MMBT3904WT1, SMMBT3904WT1 60 − (IC = −10 mAdc, IE = 0) MMBT3906WT1, SMMBT3906WT1 −40 − Emitter − Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 mAdc, IC = 0) MMBT3904WT1, SMMBT3904WT1 6.0 − (IE = −10 mAdc, IC = 0) MMBT3906WT1, SMMBT3906WT1 −5.0 − Base Cutoff Current IBL nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 − −50 Collector Cutoff Current ICEX nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 − −50
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − (IC = −0.1 mAdc, VCE = −1.0 Vdc) MMBT3906WT1, SMMBT3906WT1 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 (IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base − Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95 (IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
www.onsemi.com 2