Datasheet MMBT3904 (Diodes) - 4

MMBT3904 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 60  V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 10) BVCEO 40  V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0  V IE = 10μA, IC = 0 Collector Cut-Off Current ICEX  50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cut-Off Current IBL  50 nA VCE = 30V, VEB(OFF) = 3.0V Emitter Base Cut-Off Current IEBO  50 nA VEB = 6V Collector-Base Cut-Off Current ICBO  50 nA VCB = 48V
ON CHARACTERISTICS
(Note 10) 40  IC = 100µA, VCE = 1.0V 70  I C = 1.0mA, VCE = 1.0V DC Current Gain hFE 100 300  I C = 10mA, VCE = 1.0V 60  IC = 50mA, VCE = 1.0V 30  IC = 100mA, VCE = 1.0V 0.20 I Collector-Emitter Saturation Voltage V C = 10mA, IB = 1.0mA CE(SAT)  V 0.30 IC = 50mA, IB = 5.0mA 0.65 0.85 I Base-Emitter Saturation Voltage V C = 10mA, IB = 1.0mA BE(SAT)  V 0.95 IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance COBO  4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance CIBO  8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hIE 1.0 10 kΩ Voltage Feedback Ratio hRE 0.5 8.0 x 10-4 VCE = 10V, IC = 1.0mA, Small Signal Current Gain h f = 1.0kHz FE 100 400  Output Admittance hOE 1.0 40 µS V Current Gain-Bandwidth Product f CE = 20V, IC = 10mA, T 300  MHz f = 100MHz V Noise Figure NF  5.0 dB CE = 5.0V, IC = 100μA, RS = 1.0kΩ f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time tD  35 ns VCC = 3.0V, IC = 10mA, Rise Time tR  35 ns VBE(OFF) = - 0.5V, IB1 = 1.0mA Storage Time tS  200 ns VCC = 3.0V, IC = 10mA, Fall Time tF  50 ns IB1 = IB2 = 1.0mA Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBT3904 4 of 7 March 2017 Document number: DS30036 Rev. 25 - 2
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