Datasheet SMBT3904PN (Infineon) - 2
| Manufacturer | Infineon |
| Description | NPN / PNP Silicon Switching Transistor Array |
| Pages / Page | 9 / 2 — SMBT3904...PN. Thermal Resistance Parameter. Symbol. Value. Unit. … |
| Revision | 01_01 |
| File Format / Size | PDF / 868 Kb |
| Document Language | English |
SMBT3904...PN. Thermal Resistance Parameter. Symbol. Value. Unit. Electrical Characteristics. Parameter. Values. min. typ. max
Model Line for this Datasheet
Text Version of Document
SMBT3904...PN Thermal Resistance Parameter Symbol Value Unit
Junction - soldering point1) RthJS K/W SMBT3904PN ≤ 140 SMBT3904UPN ≤ 135
Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 40 - - V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 6 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO - - 50 nA VCB = 30 V, IE = 0 DC current gain2) hFE - IC = 100 µA, VCE = 1 V 40 - - IC = 1 mA, VCE = 1 V 70 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage2) VCEsat V IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 Base emitter saturation voltage2) VBEsat IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 2012-08-21
Junction - soldering point1) RthJS K/W SMBT3904PN ≤ 140 SMBT3904UPN ≤ 135
Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 40 - - V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 6 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO - - 50 nA VCB = 30 V, IE = 0 DC current gain2) hFE - IC = 100 µA, VCE = 1 V 40 - - IC = 1 mA, VCE = 1 V 70 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage2) VCEsat V IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 Base emitter saturation voltage2) VBEsat IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 2012-08-21
