Datasheet IRLL110, SiHLL110 (Vishay) - 5
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 9 / 5 — IRLL110, SiHLL110. Fig. 10a - Switching Time Test Circuit. Fig. 9 - … |
| File Format / Size | PDF / 364 Kb |
| Document Language | English |
IRLL110, SiHLL110. Fig. 10a - Switching Time Test Circuit. Fig. 9 - Maximum Drain Current vs. Case Temperature
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Text Version of Document
IRLL110, SiHLL110
www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 5 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 % 10 % VGS t t t t d(on) r d(off) f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-1195-Rev. F, 25-May-15
5
Document Number: 91320 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 5 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 % 10 % VGS t t t t d(on) r d(off) f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-1195-Rev. F, 25-May-15
5
Document Number: 91320 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
