Datasheet 2N5551 / MMBT5551 (ON Semiconductor) - 5

2 N 5551 / MMBT5551 — NPN Ge Typical Performance Characteristics 250
125oC
V]
V =5V CE
10
? 10
E [
100oC
AG 200 LT IN
75oC
R VO 150
β
T GA 1
25oC
EN ITTE
125oC
RR EM
100oC
100 R- C CU
-40oC
TO D 0.1 - EC FE h 50 LL
75oC 25oC -40oC
- CO ) neral-Purpose Amplifier AT (S 0 0.01 CE 1 10 100 1000 1 10 100 V I - COLLECTOR CURRENT [mA] I - COLLECTOR CURRENT [mA] C C Figure 1. Typical Pulsed Current Gain vs. Collector Figure 2. Collector-Emitter Saturation Voltage vs. Current Collector Current 1.0 1.2 V]
T = -40oC
[V] 1.0
A
E [
-4 β 0oC
0.8 GE AG
T = 25oC
A
A 25oC
T LT 0.8 VOL R VO R 0.6 E
125oC
0.6
T = 75oC
ITTE
A
TT
100oC
MI EM
75oC T = 100oC
-E 0.4
A
SE-
T = 125oC
SE
A
0.4 - BA ) - BA 0.2 AT N) (S (O BE BE V V 0.2 0.0 1 10 100 1 10 100 1000 I - COLLECTOR CURRENT [mA] I - COLLECTOR CURRENT [mA] C C Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base-Emitter On Voltage vs. Collector Collector Current Current 100 )
50
(nA V = 100V T CB N E
F]
R
p
R
[
U
10
C 10 R
C TANCE IB
TO C
PACI
E LL
CA
O C
C
-
OB
I CBO
1
1
25 50 75 100 125
0 1 2 3 4 5 6 7 8 9 10 T A - AMBIE NT TEMP ERATURE ( °C)
Ω REVERSE BIAS VOLTAGE [V]
Figure 5. Collector Cut-Off Current vs. Ambient Figure 6. Input and Output Capacitance vs. Reverse Temperature Voltage
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 2 4