Datasheet SBR10M100P5Q (Diodes) - 3
| Manufacturer | Diodes |
| Description | Surface Mount Schottky Barrier Diode |
| Pages / Page | 6 / 3 — SBR10M100P5Q. www.diodes.com |
| File Format / Size | PDF / 494 Kb |
| Document Language | English |
SBR10M100P5Q. www.diodes.com
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SBR10M100P5Q
) 100 1000 A( T N E R 10 100 R A) T = 175℃ U A C (µ D T T = 150℃ A R N A E 1 T = 125℃ A 10 R W R U T = 125℃ A C FOR T = 150℃ A S 0.1 GE 1 T = 175℃ A OU A K T = 85℃ E T = 85℃ A A N A E L TA , N 0.01 T = 25℃ I R 0.1 A T = 25℃ A TA S NI T = -55℃ A , I F 0.001 0.01 0 200 400 600 800 1000 0 20 40 60 80 100 V , INSTANTANEOUS FORWARD VOLTAGE (mV) V , REVERSE VOLTAGE (V) R F Figure 2. Typical Reverse Characteristics Figure 1. Typical Forward Characteristics 9 9 25oC 8 8 ) 85oC ) W 7 W 7 ( 125oC ON 6 ON 6 TI TI D=0.5 A A P 5 150oC P 5 I I S S DC S 175oC S I 4 I 4 D D D=0.2 R R E 3 E 3 D=0.1 OW 2 OW 2 P P , D D P 1 P 1 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 1 2 3 4 5 6 7 8 9 10 11 I , AVERAGE RECTIFIED OUTPUT CURRENT(A) I , AVERAGE RECTIFIED OUTPUT CURRENT(A) O O Figure 3. Forward Power Dissipation T =125oC J Figure 4. Forward Power Dissipation D=0.5 12 1000 30 Rθ ) =3oC/W J A T JL ( m U 10 ( 25 T N TP GY E R R OU E R D 8 20 ) Note 7 N U E A E C FI T( E E TI N H H C E C 100 15 6 C E R N N R R A A L L U A A GE C 10 V V 4 A A A Current R . E X X V A 5 A A M M , 2 , I o M I M E 10 0 0 10.0 100.0 1000.0 25 50 75 100 125 150 175 t , PULSE DURATION (µs) P T , AMBIENT TEMPERATURE (℃) A Figure 6. Single pulse Max. Avalanche Energy and Figure 5. Forward Current Derating Curve Current SBR10M100P5Q 3 of 6 September 2018 Document number:DS40876 Rev. 3 - 2
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© Diodes Incorporated
) 100 1000 A( T N E R 10 100 R A) T = 175℃ U A C (µ D T T = 150℃ A R N A E 1 T = 125℃ A 10 R W R U T = 125℃ A C FOR T = 150℃ A S 0.1 GE 1 T = 175℃ A OU A K T = 85℃ E T = 85℃ A A N A E L TA , N 0.01 T = 25℃ I R 0.1 A T = 25℃ A TA S NI T = -55℃ A , I F 0.001 0.01 0 200 400 600 800 1000 0 20 40 60 80 100 V , INSTANTANEOUS FORWARD VOLTAGE (mV) V , REVERSE VOLTAGE (V) R F Figure 2. Typical Reverse Characteristics Figure 1. Typical Forward Characteristics 9 9 25oC 8 8 ) 85oC ) W 7 W 7 ( 125oC ON 6 ON 6 TI TI D=0.5 A A P 5 150oC P 5 I I S S DC S 175oC S I 4 I 4 D D D=0.2 R R E 3 E 3 D=0.1 OW 2 OW 2 P P , D D P 1 P 1 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 1 2 3 4 5 6 7 8 9 10 11 I , AVERAGE RECTIFIED OUTPUT CURRENT(A) I , AVERAGE RECTIFIED OUTPUT CURRENT(A) O O Figure 3. Forward Power Dissipation T =125oC J Figure 4. Forward Power Dissipation D=0.5 12 1000 30 Rθ ) =3oC/W J A T JL ( m U 10 ( 25 T N TP GY E R R OU E R D 8 20 ) Note 7 N U E A E C FI T( E E TI N H H C E C 100 15 6 C E R N N R R A A L L U A A GE C 10 V V 4 A A A Current R . E X X V A 5 A A M M , 2 , I o M I M E 10 0 0 10.0 100.0 1000.0 25 50 75 100 125 150 175 t , PULSE DURATION (µs) P T , AMBIENT TEMPERATURE (℃) A Figure 6. Single pulse Max. Avalanche Energy and Figure 5. Forward Current Derating Curve Current SBR10M100P5Q 3 of 6 September 2018 Document number:DS40876 Rev. 3 - 2
www.diodes.com
© Diodes Incorporated
