Datasheet ADuM4121-1-EP (Analog Devices)

High Voltage, Isolated Gate Driver with Internal Mil er Clamp, 2.3 A Output Enhanced Product ADuM4121-1-EP FEATURES GENERAL DESCRIPTION 2.3 A peak output current (typical)
The ADuM4121-1-EP1 is a 2.3 A isolated, single-channel driver
2.5 V to 6.5 V input
that employ Analog Devices, Inc., iCoupler® technology to provide
7.5 V to 35 V output
precision isolation. The ADuM4121-1-EP provides 5 kV rms
Undervoltage lockout (UVLO) at 2.5 V VDD1 and 7.5 V VDD2
isolation in the wide-body, 8-lead SOIC package. Combining high
Precise timing characteristics
speed CMOS and monolithic transformer technology, this
53 ns maximum isolator and driver propagation delay
isolation component provides outstanding performance
CMOS input logic levels
characteristics superior to alternatives such as the combination
High common-mode transient immunity: >150 kV/µs
of pulse transformers and gate drivers.
High junction temperature operation: 125°C
The ADuM4121-1-EP operates with an input supply ranging
Default low output
from 2.5 V to 6.5 V, providing compatibility with lower voltage
Internal Miller clamp
systems. In comparison to gate drivers that employ high voltage
Safety and regulatory approvals ( pending)
level translation methodologies, the ADuM4121-1-EP offers the
UL recognition per UL 1577
benefit of true, galvanic isolation between the input and the output.
5 kV rms for 1-minute withstand CSA Component Acceptance Notice 5A
The ADuM4121-1-EP includes an internal Mil er clamp that
VDE certificate of conformity (pending)
activates at 2 V on the fal ing edge of the gate drive output,
DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12
supplying the driven gate with a lower impedance path to reduce
VIORM = 849 V peak
the chance of Miller capacitance induced turn on.
Wide-body, 8-lead SOIC
The ADuM4121-1-EP provides reliable control over the switching
ENHANCED PRODUCT FEATURES
characteristics of insulated gate bipolar transistor (IGBT)/metal oxide semiconductor field effect transistor (MOSFET) configura-
Supports defense and aerospace applications (AQEC standard)
tions over a wide range of switching voltages.
Military temperature range (−55°C to +125°C) Controlled manufacturing baseline
Additional application and technical information can be found
1 assembly/test site
in the ADuM4121-1 data sheet.
1 fabrication site Product change notification Qualification data available on request APPLICATIONS Missiles and munitions Avionics Unmanned systems Isolated IGBT/MOSFET gate drives FUNCTIONAL BLOCK DIAGRAM ADuM4121-1-EP UVLO TSD VDD1 1 8 VDD2 DECODE 2 ENCODE AND V 7 V I+ LOGIC OUT VI– 3 6 CLAMP 2V GND1 4 5 GND UVLO 2
001 17322- Figure 1. 1 Protected by U.S. Patents 5,952,849; 6,873,065; and 7,075,329. Other patents pending.
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Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS REGULATORY INFORMATION PACKAGE CHARACTERISTICS INSULATION AND SAFETY RELATED SPECIFICATIONS DIN V VDE V 0884-10 (VDE V 0884-10) INSULATION CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE