Datasheet FDN336P (ON Semiconductor) - 4
| Manufacturer | ON Semiconductor |
| Description | Single P-Channel Logic Level PowerTrench MOSFET -20V, -1.3A, 200mΩ |
| Pages / Page | 5 / 4 — Typical Electrical Characteristics. Figure 7. Gate Charge … |
| Revision | 4 |
| File Format / Size | PDF / 202 Kb |
| Document Language | English |
Typical Electrical Characteristics. Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics
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Text Version of Document
Typical Electrical Characteristics
(continued) 5 700 I = -1.3A D 400 4 V = -5V DS C iss -10V 200 -15V 3 100 2 C oss CAPACITANCE (pF) 1 40 f = 1 MHz GS C rss -V , GATE-SOURCE VOLTAGE (V) V = 0 V GS 0 0 1 2 3 4 0.1 0.2 0.5 1 2 5 10 20 Q , GATE CHARGE (nC) g -V , DRAIN TO SOURCE VOLTAGE (V) DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics
. 30 50 10 1ms SINGLE PULSE 40 10ms R =270°C/W θJA 3 RDS(ON) LIMIT T = 25°C A 30 1 100ms 0.3 1s 20 POWER (W) V = -4.5V 10s 0.1 GS DC D SINGLE PULSE 10 -I , DRAIN CURRENT (A) R = 270°C/W 0.03 θJA T = 25°C A 0 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 0.2 0.5 1 3 5 10 30 SINGLE PULSE TIME (SEC) -V , DRAIN-SOURCE VOLTAGE (V) DS
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 0.5 0.2 R (t) = r(t) * R 0.2 θJA θJA R = 270 °C/W 0.1 θJA 0.1 0.05 0.05 P(pk) 0.02 0.02 0.01 t 1 0.01 t Single Pulse 2 0.005 T - T = P * R (t) J A θJA r(t), NORMALIZED EFFECTIVE Duty Cycle, D = t /t 1 2 0.002 TRANSIENT THERMAL RESISTANCE 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t , TIME (sec) 1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4
(continued) 5 700 I = -1.3A D 400 4 V = -5V DS C iss -10V 200 -15V 3 100 2 C oss CAPACITANCE (pF) 1 40 f = 1 MHz GS C rss -V , GATE-SOURCE VOLTAGE (V) V = 0 V GS 0 0 1 2 3 4 0.1 0.2 0.5 1 2 5 10 20 Q , GATE CHARGE (nC) g -V , DRAIN TO SOURCE VOLTAGE (V) DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics
. 30 50 10 1ms SINGLE PULSE 40 10ms R =270°C/W θJA 3 RDS(ON) LIMIT T = 25°C A 30 1 100ms 0.3 1s 20 POWER (W) V = -4.5V 10s 0.1 GS DC D SINGLE PULSE 10 -I , DRAIN CURRENT (A) R = 270°C/W 0.03 θJA T = 25°C A 0 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 0.2 0.5 1 3 5 10 30 SINGLE PULSE TIME (SEC) -V , DRAIN-SOURCE VOLTAGE (V) DS
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 0.5 0.2 R (t) = r(t) * R 0.2 θJA θJA R = 270 °C/W 0.1 θJA 0.1 0.05 0.05 P(pk) 0.02 0.02 0.01 t 1 0.01 t Single Pulse 2 0.005 T - T = P * R (t) J A θJA r(t), NORMALIZED EFFECTIVE Duty Cycle, D = t /t 1 2 0.002 TRANSIENT THERMAL RESISTANCE 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t , TIME (sec) 1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4
