Datasheet IXTA3N50D2, IXTP3N50D2 (IXYS) - 2

IXTA3N50D2 IXTP3N50D2 Symbol Test Conditions Characteristic Values TO-263 (IXTA) Outline
(T = 25C, Unless Otherwise Specified)
Min. Typ. Max.
J
g
V = 30V, I = 1.5A, Note 1 1.3 2.1 S
fs
DS D
C
1070 pF
iss C
V = -10V, V = 25V, f = 1MHz 102 pF
oss
GS DS
C
24 pF
rss t
27 ns
d(on) Resistive Switching Times
1. Gate
t
71 ns 2. Drain
r
V =  5V, V = 250V, I = 1.5A 3. Source
t
GS DS D 56 ns 4. Drain
d(off)
R = 3.3 (External) Bottom
t
G 42 ns Side
f Q
40 nC
g(on) Q
V = 5V, V = 250V, I = 1.5A 5 nC Dim. Millimeter Inches
gs
GS DS D Min. Max. Min. Max.
Q
20 nC A 4.06 4.83 .160 .190
gd
b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055
R
1.00 C/W
thJC
c 0.40 0.74 .016 .029
R
TO-220 0.50 C/W c2 1.14 1.40 .045 .055
thCS
D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 e 2.54 BSC .100 BSC
Safe-Operating-Area Specification
L 14.61 15.88 .575 .625
Characteristic Values
L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055
Symbol Test Conditions Min. Typ. Max.
L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005
SOA
V = 400V, I = 0.19A, T = 75C, Tp = 5s 75 W DS D C
TO-220 (IXTP) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values
(T = 25C, Unless Otherwise Specified)
Min. Typ. Max.
J
V
I = 3A, V = -10V, Note 1 0.8 1.3 V
SD
F GS
t
340 ns
rr
I = 3A, -di/dt = 100A/s
I
F 10.9 A
RM
V = 100V, V = -10V
Q
R 1.86 GS μC
RM
Pins: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537