Datasheet GS66508T (GaN Systems) - 4

GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Electrical Characteristics continued (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)
Parameters Sym. Min. Typ. Max. Units Conditions
Turn-On Delay tD(on) 4.1 ns Rise Time tR 3.7 ns VDD = 400 V, VGS =0-6 V ID = 16 A, RG(ext) = 5 Ω Turn-Off Delay tD(off) 8 ns TJ = 25 °C (note 6) Fall Time tF 5.2 ns Turn-On Delay tD(on) 4.3 ns Rise Time tR 4.9 ns VDD = 400 V, VGS =0-6 V ID = 16 A, RG(ext) = 5 Ω Turn-Off Delay tD(off) 8.2 ns TJ=125 °C (note 6) Fall Time tF 3.4 ns Output Capacitance Stored Energy EOSS 7 µJ VDS = 400 V VGS = 0 V, f = 1 MHz Switching Energy during turn-on Eon 47.5 µJ VDS = 400 V, ID = 15 A VGS = 0-6 V, RG(on) = 10 Ω RG(off) = 1 Ω, L = 40 µH Switching Energy during turn-off Eoff 7.5 µJ LP = 10 nH (notes 7, 8) (6) See Figure 12 for timing test circuit diagram and definition waveforms (7) LP = parasitic inductance (8) See Figure 13 for switching test circuit Rev 180424 © 2009-2018 GaN Systems Inc. 4 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback