Datasheet SI4480EY (Vishay) - 3
| Manufacturer | Vishay |
| Description | N-Channel 80-V (D-S) MOSFET |
| Pages / Page | 5 / 3 — Si4480EY. Vishay Siliconix. On-Resistance vs. Drain Current. Capacitance. … |
| File Format / Size | PDF / 53 Kb |
| Document Language | English |
Si4480EY. Vishay Siliconix. On-Resistance vs. Drain Current. Capacitance. Gate Charge. On-Resistance vs. Junction Temperature
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Si4480EY Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.05 2500 Ciss ) 0.04 2000 W VGS = 6 V 0.03 1500 VGS = 10 V 0.02 1000 - On-Resistance ( - Capacitance (pF) C Coss 0.01 500 r DS(on) Crss 0.00 0 0 10 20 30 40 0 10 20 30 40 50 60 I V D - Drain Current (A) DS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 2.4 VDS = 40 V VGS = 10 V I 2.2 D = 6.0 A I ) D = 6 A 8 W 2.0 oltage (V) 1.8 6 1.6 (Normalized) 1.4 - On-Resistance ( 4 - Gate-to-Source V 1.2 GS r DS(on) 1.0 V 2 0.8 0 0.6 0 6 12 18 24 30 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.06 40 0.05 ) W ID = 6.0 A TJ = 175_C 0.04 10 0.03 - On-Resistance ( - Source Current (A) 0.02 T S J = 25_C I r DS(on) 0.01 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10 V V SD - Source-to-Drain Voltage (V) GS - Gate-to-Source Voltage (V) Document Number: 71060 www.vishay.com S-03951—Rev. B, 26-May-03
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Document Outline Datasheet Disclaimer Datasheet Disclaimer
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.05 2500 Ciss ) 0.04 2000 W VGS = 6 V 0.03 1500 VGS = 10 V 0.02 1000 - On-Resistance ( - Capacitance (pF) C Coss 0.01 500 r DS(on) Crss 0.00 0 0 10 20 30 40 0 10 20 30 40 50 60 I V D - Drain Current (A) DS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 2.4 VDS = 40 V VGS = 10 V I 2.2 D = 6.0 A I ) D = 6 A 8 W 2.0 oltage (V) 1.8 6 1.6 (Normalized) 1.4 - On-Resistance ( 4 - Gate-to-Source V 1.2 GS r DS(on) 1.0 V 2 0.8 0 0.6 0 6 12 18 24 30 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.06 40 0.05 ) W ID = 6.0 A TJ = 175_C 0.04 10 0.03 - On-Resistance ( - Source Current (A) 0.02 T S J = 25_C I r DS(on) 0.01 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10 V V SD - Source-to-Drain Voltage (V) GS - Gate-to-Source Voltage (V) Document Number: 71060 www.vishay.com S-03951—Rev. B, 26-May-03
2-3
Document Outline Datasheet Disclaimer Datasheet Disclaimer
