Datasheet IRF7832 (International Rectifier) - 4
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET |
| Pages / Page | 10 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| File Format / Size | PDF / 193 Kb |
| Document Language | English |
Fig 5. Fig 6. Fig 7. Fig 8
Model Line for this Datasheet
Text Version of Document
IRF7832 100000 6 VGS = 0V, f = 1 MHZ ID= 16A Ciss = Cgs + Cgd, Cds SHORTED C ) VDS= 24V rss = Cgd 5 V( C V oss = Cds + Cgd e DS= 15V g ) a F tl 10000 p o 4 ( e V c e n c a C r ti iss u c o 3 a S p - a ot C - , e 1000 t 2 C a Coss G , S Crss G 1 V 100 0 1 10 100 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 )Α ) A ( t t 100 n n e e r r r r 100 u u C C n e i TJ = 150°C c a r r 10 u D 100µsec o e S- sr T ot e J = 25°C - v ni 10 e a R r , D 1 1msec D , I S I D Tc = 25°C Tj = 150°C V 10msec GS = 0V Single Pulse 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 V V SD , Source-to-Drain Voltage (V) DS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 )Α ) A ( t t 100 n n e e r r r r 100 u u C C n e i TJ = 150°C c a r r 10 u D 100µsec o e S- sr T ot e J = 25°C - v ni 10 e a R r , D 1 1msec D , I S I D Tc = 25°C Tj = 150°C V 10msec GS = 0V Single Pulse 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 V V SD , Source-to-Drain Voltage (V) DS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
