Datasheet ACS780xLR (Allegro) - 7
| Manufacturer | Allegro |
| Description | High-Precision Linear Hall-Effect-Based Current Sensor IC With 200 μΩ Current Conductor |
| Pages / Page | 25 / 7 — High-Precision Linear Hall-Effect-Based. ACS780xLR. Current Sensor IC … |
| File Format / Size | PDF / 2.7 Mb |
| Document Language | English |
High-Precision Linear Hall-Effect-Based. ACS780xLR. Current Sensor IC With 200 µΩ Current Conductor
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High-Precision Linear Hall-Effect-Based ACS780xLR Current Sensor IC With 200 µΩ Current Conductor X 050U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC = 5 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 – 50 A SensTA Measured using 50% of full scale IP , TA = 25°C 58.1 60 61.95 mV/A Sensitivity [2] Sens(TOP)HT Measured using 50% of full scale IP , TOP = 25°C to 150°C 58.05 60 61.95 mV/A Sens(TOP)LT Measured using 50% of full scale IP , TOP = –40°C to 25°C 57.75 60 62.25 mV/A VNOISEPP Peak-to-peak, TA= 25°C, 1 nF on VOUT pin to GND – 54 – mV Noise [3] INOISE Input referred – 0.4 – mARMS /
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(Hz) Nonlinearity ELIN measured using 32 A and 16 A –1 – 1 % VOE(TA) IP = 0 A, TA = 25°C –10 ±3 10 mV Electrical Offset Voltage [4][5] VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±5 10 mV VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±10 20 mV Electric Offset Voltage Over TOP = –40°C to 150°C, estimated shift after AEC-Q100 grade 0 Lifetime [6] ΔVOE(LIFE) qualification testing – ±1 – mV E Total Output Error TOT(HT) Measured using 50% of full scale IP , TOP = 25°C to 150°C –3.25 ±0.8 3.25 % ETOT(LT) Measured using 50% of full scale IP , TOP = –40°C to 25°C –3.75 ±1.5 3.75 % Total Output Error Including ETOT(HT,LIFE) Measured using 50% of full scale IP , TOP = 25°C to 150°C –4.1 ±2.28 4.1 % Lifetime Drift [7] ETOT(LT,LIFE) Measured using 50% of full scale IP , TOP = –40°C to 25°C –5.6 ±2.98 5.6 % [1] See Characteristic Performance Data page for parameter distributions over temperature range. [2] This parameter may drift a maximum of ΔSensLIFE over lifetime. [3] ±3 sigma noise voltage. [4] Drift is referred to ideal VOUT(QU) = 0.5 V. [5] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime. [6] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information. [7] The maximum drift of any single device during qualification testing was 4%. Allegro MicroSystems, LLC 7 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com
Primary Sampled Current IP 0 – 50 A SensTA Measured using 50% of full scale IP , TA = 25°C 58.1 60 61.95 mV/A Sensitivity [2] Sens(TOP)HT Measured using 50% of full scale IP , TOP = 25°C to 150°C 58.05 60 61.95 mV/A Sens(TOP)LT Measured using 50% of full scale IP , TOP = –40°C to 25°C 57.75 60 62.25 mV/A VNOISEPP Peak-to-peak, TA= 25°C, 1 nF on VOUT pin to GND – 54 – mV Noise [3] INOISE Input referred – 0.4 – mARMS /
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(Hz) Nonlinearity ELIN measured using 32 A and 16 A –1 – 1 % VOE(TA) IP = 0 A, TA = 25°C –10 ±3 10 mV Electrical Offset Voltage [4][5] VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±5 10 mV VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±10 20 mV Electric Offset Voltage Over TOP = –40°C to 150°C, estimated shift after AEC-Q100 grade 0 Lifetime [6] ΔVOE(LIFE) qualification testing – ±1 – mV E Total Output Error TOT(HT) Measured using 50% of full scale IP , TOP = 25°C to 150°C –3.25 ±0.8 3.25 % ETOT(LT) Measured using 50% of full scale IP , TOP = –40°C to 25°C –3.75 ±1.5 3.75 % Total Output Error Including ETOT(HT,LIFE) Measured using 50% of full scale IP , TOP = 25°C to 150°C –4.1 ±2.28 4.1 % Lifetime Drift [7] ETOT(LT,LIFE) Measured using 50% of full scale IP , TOP = –40°C to 25°C –5.6 ±2.98 5.6 % [1] See Characteristic Performance Data page for parameter distributions over temperature range. [2] This parameter may drift a maximum of ΔSensLIFE over lifetime. [3] ±3 sigma noise voltage. [4] Drift is referred to ideal VOUT(QU) = 0.5 V. [5] This parameter may drift a maximum of ΔVOE(LIFE) over lifetime. [6] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information. [7] The maximum drift of any single device during qualification testing was 4%. Allegro MicroSystems, LLC 7 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com
