Datasheet IRF9510S, SiHF9510S (Vishay) - 4
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 9 / 4 — IRF9510S, SiHF9510S. Fig. 5 - Typical Capacitance vs. Drain-to-Source … |
| File Format / Size | PDF / 179 Kb |
| Document Language | English |
IRF9510S, SiHF9510S. Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
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IRF9510S, SiHF9510S
Vishay Siliconix 350 VGS = 0 V, f = 1 MHz C = C + C , C Shorted 101 iss gs gd ds C = C 280 rss gd C = C + C oss ds gd Ciss 210 175 °C ain Current (A) 25 °C 100 140 Coss erse Dr v Capacitance (pF) 70 , Re C SD rss - I V = 0 V GS 0 10-1 100 101 1.0 2.0 3.0 4.0 5.0 91073_05 - V 91073_07 - V DS, Drain-to-Source Voltage (V) SD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 102 I = 8.0 A Operation in this area limited D 5 by RDS(on) 16 V = 400 V DS 10 µs 2 ltage (V) V = 250 V o DS V 10 V = 100 V 12 DS 100 µs 5 2 1 ms 8 ain Current (A) 1 , Dr 10 ms I D 5 , Gate-to-Source 4 T = 25
°
C GS C V For test circuit 2 T = 150
°
C J see figure 13 Single Pulse 0 0.1 2 5 2 5 2 5 2 5 2 5 0 15 30 45 60 75 0.1 1 10 102 103 104 91071_06 QG, Total Gate Charge (nC) 91071_08 VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91073 4 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix 350 VGS = 0 V, f = 1 MHz C = C + C , C Shorted 101 iss gs gd ds C = C 280 rss gd C = C + C oss ds gd Ciss 210 175 °C ain Current (A) 25 °C 100 140 Coss erse Dr v Capacitance (pF) 70 , Re C SD rss - I V = 0 V GS 0 10-1 100 101 1.0 2.0 3.0 4.0 5.0 91073_05 - V 91073_07 - V DS, Drain-to-Source Voltage (V) SD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 102 I = 8.0 A Operation in this area limited D 5 by RDS(on) 16 V = 400 V DS 10 µs 2 ltage (V) V = 250 V o DS V 10 V = 100 V 12 DS 100 µs 5 2 1 ms 8 ain Current (A) 1 , Dr 10 ms I D 5 , Gate-to-Source 4 T = 25
°
C GS C V For test circuit 2 T = 150
°
C J see figure 13 Single Pulse 0 0.1 2 5 2 5 2 5 2 5 2 5 0 15 30 45 60 75 0.1 1 10 102 103 104 91071_06 QG, Total Gate Charge (nC) 91071_08 VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91073 4 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
