Datasheet IRF540NS, IRF540NL (International Rectifier) - 2
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET |
| Pages / Page | 11 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| File Format / Size | PDF / 284 Kb |
| Document Language | English |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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Text Version of Document
IRF540NS/IRF540NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 44 mΩ VGS = 10V, ID = 16A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 21 ––– ––– S VDS = 50V, ID = 16A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 71 ID = 16A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 35 ––– ID = 16A ns td(off) Turn-Off Delay Time ––– 39 ––– RG = 5.1Ω tf Fall Time ––– 35 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1960 ––– VGS = 0V Coss Output Capacitance ––– 250 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 700 185 mJ IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 33 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 110 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A Qrr Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by This is a typical value at device destruction and represents max. junction temperature. (See fig. 11) operation outside rated limits. Starting TJ = 25°C, L =1.5mH This is a calculated value limited to TJ = 175°C . RG = 25Ω, IAS = 16A. (See Figure 12) Uses IRF540N data and test conditions. ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, **When mounted on 1" square PCB (FR-4 or G-10 Material). For TJ ≤ 175°C recommended footprint and soldering techniques refer to application Pulse width ≤ 400µs; duty cycle ≤ 2%. note #AN-994 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 44 mΩ VGS = 10V, ID = 16A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 21 ––– ––– S VDS = 50V, ID = 16A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 71 ID = 16A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 35 ––– ID = 16A ns td(off) Turn-Off Delay Time ––– 39 ––– RG = 5.1Ω tf Fall Time ––– 35 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1960 ––– VGS = 0V Coss Output Capacitance ––– 250 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 700 185 mJ IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 33 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 110 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A Qrr Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by This is a typical value at device destruction and represents max. junction temperature. (See fig. 11) operation outside rated limits. Starting TJ = 25°C, L =1.5mH This is a calculated value limited to TJ = 175°C . RG = 25Ω, IAS = 16A. (See Figure 12) Uses IRF540N data and test conditions. ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, **When mounted on 1" square PCB (FR-4 or G-10 Material). For TJ ≤ 175°C recommended footprint and soldering techniques refer to application Pulse width ≤ 400µs; duty cycle ≤ 2%. note #AN-994 2 www.irf.com
