Datasheet IRFF9120, JANTX2N6845, JANTXV2N6845 (International Rectifier)
| Manufacturer | International Rectifier |
| Description | 100V, P-CHANNEL MOSFET TO-205AF (TO-39) |
| Pages / Page | 7 / 1 — IRFF9120. REPETITIVE AVALANCHE AND dv/dt RATED. JANTX2N6845. HEXFET … |
| File Format / Size | PDF / 134 Kb |
| Document Language | English |
IRFF9120. REPETITIVE AVALANCHE AND dv/dt RATED. JANTX2N6845. HEXFET TRANSISTORS. JANTXV2N6845. THRU-HOLE (TO-205AF)
Model Line for this Datasheet
Text Version of Document
PD - 90552C
IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845
HEXFET TRANSISTORS JANTXV2N6845 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID
IRFF9120 -100V 0.60Ω -4.0A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis-
TO-39
tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt-
Features:
age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings and temperature stability of the electrical parameters. n Dynamic dv/dt Rating They are well suited for applications such as switch- n Hermetically Sealed ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling
Absolute Maximum Ratings Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -4.0 ID @ VGS = -10V, TC = 100°C Continuous Drain Current -2.6 A IDM Pulsed Drain Current ➀ -16 PD @ TC = 25°C Max. Power Dissipation 2 0 W Linear Derating Factor 0.16 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 1 1 5 mJ IAR Avalanche Current ➀ — A EAR Repetitive Avalanche Energy ➀ — mJ dv/dt Peak Diode Recovery dv/dt ➂ -5.0 V/ns T J Operating Junction -55 to 150 T o STG Storage Temperature Range C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98(typical) g For footnotes refer to the last page www.irf.com 1 01/22/01
IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845
HEXFET TRANSISTORS JANTXV2N6845 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID
IRFF9120 -100V 0.60Ω -4.0A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis-
TO-39
tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt-
Features:
age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings and temperature stability of the electrical parameters. n Dynamic dv/dt Rating They are well suited for applications such as switch- n Hermetically Sealed ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling
Absolute Maximum Ratings Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -4.0 ID @ VGS = -10V, TC = 100°C Continuous Drain Current -2.6 A IDM Pulsed Drain Current ➀ -16 PD @ TC = 25°C Max. Power Dissipation 2 0 W Linear Derating Factor 0.16 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 1 1 5 mJ IAR Avalanche Current ➀ — A EAR Repetitive Avalanche Energy ➀ — mJ dv/dt Peak Diode Recovery dv/dt ➂ -5.0 V/ns T J Operating Junction -55 to 150 T o STG Storage Temperature Range C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98(typical) g For footnotes refer to the last page www.irf.com 1 01/22/01
