Datasheet AD8512-EP (Analog Devices) - 3

Enhanced Product AD8512-EP SPECIFICATIONS
VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 0.1 0.9 mV −55°C < TA < +125°C 1.8 mV Input Bias Current IB 21 75 pA −55°C < TA < +85°C 0.7 nA −55°C < TA < +125°C 7.5 nA Input Offset Current IOS 5 50 pA −55°C < TA < +85°C 0.3 nA −55°C < TA < +125°C 0.5 nA Input Capacitance Differential 12.5 pF Common Mode 11.5 pF Input Voltage Range −2.0 +2.5 V Common-Mode Rejection Ratio CMRR VCM = −2.0 V to +2.5 V 86 100 dB Large-Signal Voltage Gain AVO RL = 2 kΩ, VO = −3 V to +3 V 65 107 V/mV Offset Voltage Drift (TCVOS) ΔVOS/ΔT 1.7 12 µV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ 4.1 4.3 V RL = 2 kΩ 3.9 4.2 V RL = 600 Ω 3.7 4.1 V Output Voltage Low VOL RL = 10 kΩ, −55°C < TA < +125°C −4.9 −4.7 V RL = 2 kΩ, −55°C < TA < +125°C −4.9 −4.5 V RL = 600 Ω, −55°C < TA < +125°C −4.8 −4.2 V Output Current IOUT ±40 ±54 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 130 dB Supply Current/Amplifier ISY VO = 0 V 2.0 2.3 mA −55°C < TA < +125°C 2.5 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 20 V/µs Gain Bandwidth Product GBP 8 MHz Settling Time tS To 0.1%, 0 V to 4 V step, G = +1 0.4 µs Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin φM 44.5 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 10 Hz 34 nV/√Hz f = 100 Hz 12 nV/√Hz f = 1 kHz 8.0 10 nV/√Hz f = 10 kHz 7.6 nV/√Hz Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 µV p-p Rev. 0 | Page 3 of 7 Document Outline Features Enhanced Product Features Applications Pin Configuration General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide