Datasheet BC556, BC557 (NXP) - 3
| Manufacturer | NXP |
| Description | PNP general purpose transistors |
| Pages / Page | 8 / 3 — THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. … |
| File Format / Size | PDF / 252 Kb |
| Document Language | English |
THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. Note. CHARACTERISTICS. MIN. TYP. MAX. Notes
Model Line for this Datasheet
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THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = −30 V; IE = 0 A − −1 −15 nA VCB = −30 V; IE = 0 A; Tj = 150 °C − − −4 μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 V − − −100 nA hFE DC current gain IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 BC556 125 − 475 BC557 125 − 800 BC556A 125 − 250 BC556B; BC557B 220 − 475 BC557C 420 − 800 VCEsat collector-emitter saturation IC = −10 mA; IB = −0.5 mA − −60 −300 mV voltage IC = −100 mA; IB = −5 mA − −180 −650 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 − −750 − mV IC = −100 mA; IB = −5 mA; note 1 − −930 − mV VBE base-emitter voltage VCE = −5 V; IC = −2 mA; note 2 −600 −650 −750 mV VCE = −5 V; IC = −10 mA; note 2 − − −820 mV Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − 3 − pF Ce emitter capacitance VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz − 10 − pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − − MHz F noise figure V − CE = −5 V; IC = −200 μA; RS = 2 kΩ; 2 10 dB f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. 2004 Oct 11 3 Document Outline Features Applications Description Pinning Ordering information Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = −30 V; IE = 0 A − −1 −15 nA VCB = −30 V; IE = 0 A; Tj = 150 °C − − −4 μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 V − − −100 nA hFE DC current gain IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 BC556 125 − 475 BC557 125 − 800 BC556A 125 − 250 BC556B; BC557B 220 − 475 BC557C 420 − 800 VCEsat collector-emitter saturation IC = −10 mA; IB = −0.5 mA − −60 −300 mV voltage IC = −100 mA; IB = −5 mA − −180 −650 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 − −750 − mV IC = −100 mA; IB = −5 mA; note 1 − −930 − mV VBE base-emitter voltage VCE = −5 V; IC = −2 mA; note 2 −600 −650 −750 mV VCE = −5 V; IC = −10 mA; note 2 − − −820 mV Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − 3 − pF Ce emitter capacitance VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz − 10 − pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − − MHz F noise figure V − CE = −5 V; IC = −200 μA; RS = 2 kΩ; 2 10 dB f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. 2004 Oct 11 3 Document Outline Features Applications Description Pinning Ordering information Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers
