Datasheet BC557B (Multicomp) - 2

BC557B General Purpose Transistors
Absolute Maximum Ratings Parameters Symbol Rating Unit
Collector-Emitter Voltage VCEO 45 Collector-Emitter Voltage VCES 50 V Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5.0 I 100 Collector Current Continuous Peak C ICM 200 mA Base Current Peak IBM 200 Emitter Current Peak IEM Power Dissipation at Ta = 25°C P 500 mW Derate above 25°C TA 4.0 mW/°C Storage Temperature Tstg -65 to +150 °C Junction Temperature Tj 150
Thermal Resistance
Junction to Ambient Rth (j-a) 250 °C/W
Electrical Characteristics (T
a
= 25°C unless otherwise specified) Parameters Symbol Test Condition Rating Unit
Collector-Emitter Voltage VCEO IC = 2mA, IB = 0 >45 Collector-Base Voltage VCBO IC = 100µA, IE = 0 >50 V Emitter-Base Voltage VEBO IE = 100µA, IC = 0 >5.0 V <15 nA CB = 30V, IE = 0 I T Collector-Cut off Current CBO j = 150°C <5.0 I µA CES VCB = 30V, IE = 0 VCE = 80V, VBE = 0 <15 nA T Collector-Cut off Current I J = 125°C CES <4.0 V µA CE = 80V, VBE = 0 IC = 10µA, VCE = 5V
BC557B
Typical 150 DC Current Gain hFE
BC557B
200 - 450 - IC = 100mA, VCE = 5V
BC557B
Typical 200 Page <2> 13/05/08 V1.1