Datasheet BC846, BC847, BC848 (Multicomp) - 2

ManufacturerMulticomp
DescriptionNPN General Purpose Transistor 0.1 A, 65 V, SOT23
Pages / Page6 / 2 — Parameter:. Symbol:. Test Conditions:. Min:. Typ:. Max:. Unit:
File Format / SizePDF / 373 Kb
Document LanguageEnglish

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Maximum Ratings & Characteristics: Tamb=25o
Parameter: Symbol: Test Conditions: Min: Typ: Max: Unit:
Collector - Base Breakdown Voltage V I =-10μA I =0 BC846 80 V (BR)CBO C E BC847 50 BC848 30 Collector - Emitter Breakdown Voltage V I =-10mA I =0 BC846 65 V (BR)CEO C B BC847 45 BC848 30 Emitter - Base Breakdown Voltage V I =10μA I =0 BC846 6 V (BR)EBO E C BC847 6 BC848 5 I V =30V,I =0 15 nA CBO CB E V =30V,I =0,T =150oC 5 uA CB E j I V =-5V,I =0 100 μA EBO EB C DC Current Gain BC846A,847A,848A h V =5V,I =-2mA 90 FE CE C BC846B,847B,848B 150 BC847C,848C 270 DC Current Gain BC846,847 h V =5V,I =10uA 110 450 FE CE C BC846A,847A,848A 110 220 BC846B,847B,848B 200 450 BC847C,848C 420 800 Collector - Emitter Saturation Voltage V I =10mA, I =0.5mA 0.09 0.25 V CE(sat) C B I =10mA, I =5mA 0.2 0.6 C B Base - Emitter Saturation Voltage V I =10mA, I =0.5mA 0.7 V BE(sat) C B I =100mA, I =5mA 0.9 C B Base Emitter Voltage V I =2mA,V =5V 0.58 0.66 0.7 V BE (on) C CE I =10mA,V =5V 0.77 C CE Collector Capacitance C V =10V,I =I =0 2.5 pF C CB E e f=1MHz Transition Frequency f V =-5V I =10mA, 100 MHz T CE C f=100MHz O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R