Datasheet BC846ALT1G (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | NPN Bipolar Transistor |
| Pages / Page | 13 / 1 — NPN Silicon. Features. www.onsemi.com. MAXIMUM RATINGS. Rating. Symbol. … |
| Revision | 17 |
| File Format / Size | PDF / 111 Kb |
| Document Language | English |
NPN Silicon. Features. www.onsemi.com. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. SOT−23. CASE 318. STYLE 6. MARKING DIAGRAM
Model Line for this Datasheet
Text Version of Document
link to page 1 link to page 1 link to page 1 link to page 1 link to page 12 BC846ALT1G Series General Purpose Transistors
NPN Silicon Features
• Moisture Sensitivity Level: 1
www.onsemi.com
• ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V COLLECTOR • S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC−Q101 1 Qualified and PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER
MAXIMUM RATINGS Rating Symbol Value Unit
3 Collector-Emitter Voltage VCEO Vdc 1 BC846 65 BC847, BC850 45 2 BC848, BC849 30
SOT−23
Collector−Base Voltage V
CASE 318
CBO Vdc BC846 80
STYLE 6
BC847, BC850 50 BC848, BC849 30
MARKING DIAGRAM
Emitter−Base Voltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 XX M G G Collector Current − Continuous IC 100 mAdc 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XX = Device Code assumed, damage may occur and reliability may be affected. M = Date Code* G = Pb−Free Package
THERMAL CHARACTERISTICS
(Note: Microdot may be in either location)
Characteristic Symbol Max Unit
*Date Code orientation and/or overbar may Total Device Dissipation FR− 5 Board, P vary depending upon manufacturing location. D 225 mW (Note 1) TA = 25°C Derate above 25°C 1.8 mW/°C
ORDERING INFORMATION
Thermal Resistance, Rq See detailed ordering and shipping information in the package JA 556 °C/W Junction−to−Ambient (Note 1) dimensions section on page 12 of this data sheet. Total Device Dissipation PD 300 mW Alumina Substrate (Note 2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, RqJA 417 °C/W Junction−to−Ambient (Note 2) Junction and Storage TJ, Tstg − 55 to °C Temperature Range +150 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
January, 2017 − Rev. 17 BC846ALT1/D
NPN Silicon Features
• Moisture Sensitivity Level: 1
www.onsemi.com
• ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V COLLECTOR • S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC−Q101 1 Qualified and PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER
MAXIMUM RATINGS Rating Symbol Value Unit
3 Collector-Emitter Voltage VCEO Vdc 1 BC846 65 BC847, BC850 45 2 BC848, BC849 30
SOT−23
Collector−Base Voltage V
CASE 318
CBO Vdc BC846 80
STYLE 6
BC847, BC850 50 BC848, BC849 30
MARKING DIAGRAM
Emitter−Base Voltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 XX M G G Collector Current − Continuous IC 100 mAdc 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XX = Device Code assumed, damage may occur and reliability may be affected. M = Date Code* G = Pb−Free Package
THERMAL CHARACTERISTICS
(Note: Microdot may be in either location)
Characteristic Symbol Max Unit
*Date Code orientation and/or overbar may Total Device Dissipation FR− 5 Board, P vary depending upon manufacturing location. D 225 mW (Note 1) TA = 25°C Derate above 25°C 1.8 mW/°C
ORDERING INFORMATION
Thermal Resistance, Rq See detailed ordering and shipping information in the package JA 556 °C/W Junction−to−Ambient (Note 1) dimensions section on page 12 of this data sheet. Total Device Dissipation PD 300 mW Alumina Substrate (Note 2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, RqJA 417 °C/W Junction−to−Ambient (Note 2) Junction and Storage TJ, Tstg − 55 to °C Temperature Range +150 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
January, 2017 − Rev. 17 BC846ALT1/D
