Datasheet BC846, BC847, BC848 (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | NPN Bipolar Transistor |
| Pages / Page | 13 / 1 — NPN Silicon. www.onsemi.com. Features. MAXIMUM RATINGS. Rating. Symbol. … |
| Revision | 12 |
| File Format / Size | PDF / 108 Kb |
| Document Language | English |
NPN Silicon. www.onsemi.com. Features. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. SC−70/SOT−323. CASE 419. STYLE 3. MARKING DIAGRAM
Model Line for this Datasheet
Text Version of Document
link to page 1 link to page 12 BC846, BC847, BC848 General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
www.onsemi.com
applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. COLLECTOR
Features
• 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 1 Qualified and PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER
MAXIMUM RATINGS Rating Symbol Value Unit
Collector-Emitter Voltage VCEO V 3 BC846 65
SC−70/SOT−323
BC847 45
CASE 419
BC848 30 1
STYLE 3
2 Collector-Base Voltage VCBO V BC846 80 BC847 50 BC848 30
MARKING DIAGRAM
Emitter-Base Voltage VEBO V BC846 6.0 BC847 6.0 BC848 5.0 XX MG Collector Current − Continuous I G C 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX = Specific Device Code
THERMAL CHARACTERISTICS
M = Month Code G = Pb−Free Package
Characteristic Symbol Max Unit
(Note: Microdot may be in either location) Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C PD 200 mW Thermal Resistance,
ORDERING INFORMATION
Junction−to−Ambient RqJA 620 °C/W See detailed ordering, marking and shipping information in the Junction and Storage Temperature T package dimensions section on page 12 of this data sheet. J, Tstg − 55 to °C +150 1. FR−5 = 1.0 x 0.75 x 0.062 in. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2015 − Rev. 12 BC846AWT1/D
NPN Silicon
These transistors are designed for general purpose amplifier
www.onsemi.com
applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. COLLECTOR
Features
• 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 1 Qualified and PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER
MAXIMUM RATINGS Rating Symbol Value Unit
Collector-Emitter Voltage VCEO V 3 BC846 65
SC−70/SOT−323
BC847 45
CASE 419
BC848 30 1
STYLE 3
2 Collector-Base Voltage VCBO V BC846 80 BC847 50 BC848 30
MARKING DIAGRAM
Emitter-Base Voltage VEBO V BC846 6.0 BC847 6.0 BC848 5.0 XX MG Collector Current − Continuous I G C 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX = Specific Device Code
THERMAL CHARACTERISTICS
M = Month Code G = Pb−Free Package
Characteristic Symbol Max Unit
(Note: Microdot may be in either location) Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C PD 200 mW Thermal Resistance,
ORDERING INFORMATION
Junction−to−Ambient RqJA 620 °C/W See detailed ordering, marking and shipping information in the Junction and Storage Temperature T package dimensions section on page 12 of this data sheet. J, Tstg − 55 to °C +150 1. FR−5 = 1.0 x 0.75 x 0.062 in. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2015 − Rev. 12 BC846AWT1/D
