Datasheet BC856, BC857, BC858, BC859, BC860 (Infineon) - 2
| Manufacturer | Infineon |
| Description | PNP Silicon AF Transistors |
| Pages / Page | 10 / 2 — BC856...BC860. Maximum Ratings. Parameter. Symbol. Unit. Thermal … |
| File Format / Size | PDF / 168 Kb |
| Document Language | English |
BC856...BC860. Maximum Ratings. Parameter. Symbol. Unit. Thermal Resistance. Electrical Characteristics. Values. min. typ. max
Model Line for this Datasheet
Text Version of Document
BC856...BC860 Maximum Ratings Parameter Symbol
BC856 BC857 BC858
Unit
BC860 BC859 Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) R ≤ thJS 240 K/W
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BC856 65 - - BC857/860 45 - - BC858/859 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC856 80 - - BC857/860 50 - - BC858/859 30 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-28-2005
BC856 BC857 BC858
Unit
BC860 BC859 Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) R ≤ thJS 240 K/W
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BC856 65 - - BC857/860 45 - - BC858/859 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC856 80 - - BC857/860 50 - - BC858/859 30 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-28-2005
