Datasheet AP3917C (Diodes) - 4
| Manufacturer | Diodes |
| Description | Universal AC High Voltage Step Down Power Switcher |
| Pages / Page | 11 / 4 — AP3917C. Recommended Operating Conditions. Symbol. Parameter. Min. Max. … |
| File Format / Size | PDF / 603 Kb |
| Document Language | English |
AP3917C. Recommended Operating Conditions. Symbol. Parameter. Min. Max. Unit. T C. Electrical Characteristics. Condition. Typ
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AP3917C Recommended Operating Conditions Symbol Parameter Min Max Unit
VCC Supply Voltage 8.2 8.8 V VDSS Drain-Source Voltage (Note 5) — 520 V TA Ambient Temperature -40 +125 °C
T C Electrical Characteristics
(VBP = 8.2V, -40C <TA<+125C, unless otherwise specified.)
U D Symbol Parameter Condition Min Typ Max Unit O HV Startup Current Source R P
I HV HV Supply Current VBP = 7V, VDRAIN = 100V — 3.5 — mA V
W
BP= 8.7V; —
E
ILEAK Leakage Current of Drain VDRAIN = 400V, 10 12 µA T
N
A = +25° C
VBP Voltage Management
V V BP Increasing Level at which HV Supply is — BP_HVOFF 8.1 8.5 8.8 V OFF V V BP Decreasing Level at which HV Supply is BP_HVON — 7.8 8.2 8.6 V ON VBP_HYS VBP Hysteresis (VBP_HVOFF —VBP_HVON) — — 280 — mV VBP_UVLO VBP Minimum Operating Voltage TA = +25°C — 6.5 — V VBP_RESTART VBP Restart Voltage — — 4.5 — V V VBP = 8.5V, f = 37kHz, I BP Operating Current with MOSFET — BP1 — 350 µA Switching D = 40%, TA = +25°C IBP2 VBP Quiescent Current with No Switching TA = +25°C — 110 200 µA IBP_LATCH VBP Latch Off-Current VBP = 8.8V, TA = +25°C — 26 — µA
Internal MOSFET
VDS Breakdown Voltage (Note 5) TA = +25°C 650 — — V TA = +25°C — — 16 RDS(ON) ON Resistance Ω TA = +125°C — — 30
Internal Current Sense
IPK_MAX Maximum Peak Current TA = +25°C 357 420 504 mA tLEB1 Leading-Edge Blanking TA = +25°C — 250 400 ns ISCP Current Set Point for Short Circuit Protection TA = +25°C — 600 — mA Leading-Edge Blanking for Short Circuit tLEB2 T Protection A = +25° C — 200 — ns
Feedback Input (FB Pin)
tMINOFF Minimum Off-Time TA = +25°C 12.5 17.5 22.5 µs Feedback Voltage for MOSFET Switch-On VFB — 2.4 2.5 2.6 V Threshold Feedback Voltage for Overload Protection V — FB_OLP 1.56 1.7 1.84 V Trigger Threshold tOLP Overload Protection Delay Time f = 36kHz — 170 — ms VOLD Open-Loop Detection Voltage TA = +25°C — 60 — mV tOLD Open-Loop Detection Blanking Time f = 15kHz, TA = +25°C — 4.3 — ms
Over Temperature Protection
TOTP Thermal Shutdown Threshold — +135 +150 +165 °C Note: 5. The drain-source voltage is 80% of VDS in the aging condition. AP3917C 4 of 11 May 2019 Document number: DS41542 Rev. 2 - 2
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VCC Supply Voltage 8.2 8.8 V VDSS Drain-Source Voltage (Note 5) — 520 V TA Ambient Temperature -40 +125 °C
T C Electrical Characteristics
(VBP = 8.2V, -40C <TA<+125C, unless otherwise specified.)
U D Symbol Parameter Condition Min Typ Max Unit O HV Startup Current Source R P
I HV HV Supply Current VBP = 7V, VDRAIN = 100V — 3.5 — mA V
W
BP= 8.7V; —
E
ILEAK Leakage Current of Drain VDRAIN = 400V, 10 12 µA T
N
A = +25° C
VBP Voltage Management
V V BP Increasing Level at which HV Supply is — BP_HVOFF 8.1 8.5 8.8 V OFF V V BP Decreasing Level at which HV Supply is BP_HVON — 7.8 8.2 8.6 V ON VBP_HYS VBP Hysteresis (VBP_HVOFF —VBP_HVON) — — 280 — mV VBP_UVLO VBP Minimum Operating Voltage TA = +25°C — 6.5 — V VBP_RESTART VBP Restart Voltage — — 4.5 — V V VBP = 8.5V, f = 37kHz, I BP Operating Current with MOSFET — BP1 — 350 µA Switching D = 40%, TA = +25°C IBP2 VBP Quiescent Current with No Switching TA = +25°C — 110 200 µA IBP_LATCH VBP Latch Off-Current VBP = 8.8V, TA = +25°C — 26 — µA
Internal MOSFET
VDS Breakdown Voltage (Note 5) TA = +25°C 650 — — V TA = +25°C — — 16 RDS(ON) ON Resistance Ω TA = +125°C — — 30
Internal Current Sense
IPK_MAX Maximum Peak Current TA = +25°C 357 420 504 mA tLEB1 Leading-Edge Blanking TA = +25°C — 250 400 ns ISCP Current Set Point for Short Circuit Protection TA = +25°C — 600 — mA Leading-Edge Blanking for Short Circuit tLEB2 T Protection A = +25° C — 200 — ns
Feedback Input (FB Pin)
tMINOFF Minimum Off-Time TA = +25°C 12.5 17.5 22.5 µs Feedback Voltage for MOSFET Switch-On VFB — 2.4 2.5 2.6 V Threshold Feedback Voltage for Overload Protection V — FB_OLP 1.56 1.7 1.84 V Trigger Threshold tOLP Overload Protection Delay Time f = 36kHz — 170 — ms VOLD Open-Loop Detection Voltage TA = +25°C — 60 — mV tOLD Open-Loop Detection Blanking Time f = 15kHz, TA = +25°C — 4.3 — ms
Over Temperature Protection
TOTP Thermal Shutdown Threshold — +135 +150 +165 °C Note: 5. The drain-source voltage is 80% of VDS in the aging condition. AP3917C 4 of 11 May 2019 Document number: DS41542 Rev. 2 - 2
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© Diodes Incorporated
