Datasheet BYV29 (Philips) - 3

Philips Semiconductors Product specification Rectifier diodes BYV29 series ultrafast trr / ns 1000 IF / A BYW29 30 Tj=150 C IF=10 A Tj=25 C 100 20 1A typ max 10 10 Tj = 25 C Tj = 100C 1 0 1 10 100 0 0.5 1 1.5 2 dIF/dt (A/us) VF / V Fig.5. Maximum t at T = 25˚C and 100˚C Fig.7. Typical and maximum forward characteristic rr j I = f(V ); parameter T F F j Irrm / A Qs / nC 10 1000 IF=10A IF = 10 A 1 100 IF=1A 2 A 0.1 10 Tj = 25 C Tj = 100C 0.01 1 1 10 100 1.0 10 100 -dIF/dt (A/us) -dIF/dt (A/us) Fig.6. Maximum I at T = 25˚C and 100˚C. Fig.8. Maximum Q at T = 25˚C rrm j s j Transient thermal impedance, Zth j-mb (K/W) 10 1 0.1 0.01 P t t p p D D = T t T 0.0011us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYV29 Fig.9. Transient thermal impedance Z = f(t ) th j-mb p September 1998 3 Rev 1.300 Document Outline FEATURES SYMBOL QUICK REFERENCE DATA GENERAL DESCRIPTION PINNING LIMITING VALUES THERMAL RESISTANCES ELECTRICAL CHARACTERISTICS PACKAGE OUTLINE DEFINITIONS