Datasheet BSC034N06NS (Infineon) - 5
| Manufacturer | Infineon |
| Description | OptiMOS Power-Transistor |
| Pages / Page | 10 / 5 — BSC034N06NS. 5 Typ. output characteristics. 6 Typ. drain-source on … |
| Revision | 02_00 |
| File Format / Size | PDF / 501 Kb |
| Document Language | English |
BSC034N06NS. 5 Typ. output characteristics. 6 Typ. drain-source on resistance. 400. 360. 320. 280. 240. 200. n o. ( DS. 160. 120. 0.0. 0.5. 1.0. 1.5. 2.0
Model Line for this Datasheet
Text Version of Document
BSC034N06NS 5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
400 7
5 V
360 6
5.5 V 10 V
320
7 V 6 V
5 280 ] 240
W
4
7 V
]
6 V
[m [A 200 ) n o I D ( DS 3 160
10 V
R
5.5 V
120 2 80
5 V
1 40 0 0 0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 250 300 350 400 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
400 160 360 320 120 280 240 ] [A 200 [S] 80 I D fsg 160 120 40 80 40
150 °C 25 °C
0 0 0 2 4 6 8 0 20 40 60 80 100 V [V] I [A] GS D
Rev.2.0 page 5 2013-10-17
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
400 7
5 V
360 6
5.5 V 10 V
320
7 V 6 V
5 280 ] 240
W
4
7 V
]
6 V
[m [A 200 ) n o I D ( DS 3 160
10 V
R
5.5 V
120 2 80
5 V
1 40 0 0 0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 250 300 350 400 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
400 160 360 320 120 280 240 ] [A 200 [S] 80 I D fsg 160 120 40 80 40
150 °C 25 °C
0 0 0 2 4 6 8 0 20 40 60 80 100 V [V] I [A] GS D
Rev.2.0 page 5 2013-10-17
