Datasheet SQJ457EP (Vishay) - 2
| Manufacturer | Vishay |
| Description | Automotive P-Channel 60 V (D-S) 175 °C MOSFET |
| Pages / Page | 10 / 2 — SQJ457EP. SPECIFICATIONS. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. … |
| File Format / Size | PDF / 212 Kb |
| Document Language | English |
SQJ457EP. SPECIFICATIONS. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. MAX. UNIT. Static. Dynamic b
Model Line for this Datasheet
Text Version of Document
SQJ457EP
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = -250 μA -60 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VGS = 0 V VDS = -60 V - - -1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50 μA VGS = 0 V VDS = -60 V, TJ = 175 °C - - -150 On-State Drain Current a ID(on) VGS = -10 V VDS -5 V -30 - - A VGS = -10 V ID = -10 A - 0.0210 0.0250 VGS = -10 V ID = -10 A, TJ = 125 °C - - 0.0409 Drain-Source On-State Resistance a R DS(on) VGS = -10 V ID = -10 A, TJ = 175 °C - - 0.0504 VGS = -4.5 V ID = -5 A - 0.0288 0.0350 Forward Transconductance b gfs VDS = -15 V, ID = -10 A - 26 - S
Dynamic b
Input Capacitance Ciss - 2600 3400 Output Capacitance Coss VGS = 0 V VDS = -25 V, f = 1 MHz - 310 450 pF Reverse Transfer Capacitance Crss - 200 275 Total Gate Charge c Qg - 65 100 Gate-Source Charge c Qgs VGS = -10 V VDS = -30 V, ID = -5 A - 9.5 - nC Gate-Drain Charge c Qgd - 19 - Gate Resistance Rg f = 1 MHz 0.50 1.19 1.80 Turn-On Delay Time c td(on) - 15 25 Rise Time c tr V - 5 10 DD = -30 V, RL = 6 ns I Turn-Off Delay Time c t D -5 A, VGEN = -10 V, Rg = 1 d(off) - 40 75 Fall Time c tf - 6 12
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM - - -100 A Forward Voltage VSD IF = -10 A, VGS = 0 V - -0.80 -1.2 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1123-Rev. A, 13-Jun-16
2
Document Number: 76628 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = -250 μA -60 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VGS = 0 V VDS = -60 V - - -1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50 μA VGS = 0 V VDS = -60 V, TJ = 175 °C - - -150 On-State Drain Current a ID(on) VGS = -10 V VDS -5 V -30 - - A VGS = -10 V ID = -10 A - 0.0210 0.0250 VGS = -10 V ID = -10 A, TJ = 125 °C - - 0.0409 Drain-Source On-State Resistance a R DS(on) VGS = -10 V ID = -10 A, TJ = 175 °C - - 0.0504 VGS = -4.5 V ID = -5 A - 0.0288 0.0350 Forward Transconductance b gfs VDS = -15 V, ID = -10 A - 26 - S
Dynamic b
Input Capacitance Ciss - 2600 3400 Output Capacitance Coss VGS = 0 V VDS = -25 V, f = 1 MHz - 310 450 pF Reverse Transfer Capacitance Crss - 200 275 Total Gate Charge c Qg - 65 100 Gate-Source Charge c Qgs VGS = -10 V VDS = -30 V, ID = -5 A - 9.5 - nC Gate-Drain Charge c Qgd - 19 - Gate Resistance Rg f = 1 MHz 0.50 1.19 1.80 Turn-On Delay Time c td(on) - 15 25 Rise Time c tr V - 5 10 DD = -30 V, RL = 6 ns I Turn-Off Delay Time c t D -5 A, VGEN = -10 V, Rg = 1 d(off) - 40 75 Fall Time c tf - 6 12
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM - - -100 A Forward Voltage VSD IF = -10 A, VGS = 0 V - -0.80 -1.2 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1123-Rev. A, 13-Jun-16
2
Document Number: 76628 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
