Datasheet RFP30N06LE, RF1S30N06LESM (Fairchild) - 4
| Manufacturer | Fairchild |
| Description | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| Pages / Page | 8 / 4 — RFP30N06LE, RF1S30N06LESM. Typical Performance Curves. (Continued). 100. … |
| File Format / Size | PDF / 194 Kb |
| Document Language | English |
RFP30N06LE, RF1S30N06LESM. Typical Performance Curves. (Continued). 100. STARTING TJ = 25oC. TC = 25oC. VGS = 10V
Model Line for this Datasheet
Text Version of Document
RFP30N06LE, RF1S30N06LESM Typical Performance Curves
Unless Otherwise Specified
(Continued) 100 100 ) STARTING TJ = 25oC TC = 25oC VGS = 10V (A STARTING TJ = 150oC VGS = 5V NT 80 ) A ( V NT GS = 4.5V CURRE 60 10 VGS = 4V CHE AN 40 AL V A , If R = 0 , DRAIN CURRE V t GS = 3V AV = (L)(IAS)/(1.3*RATED BVDSS - VDD) D I AS If R
≠
0 I 20 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] PULSE DURATION = 80
µ
s 1 DUTY CYCLE = 0.5% MAX. 0.01 0.1 1 10 0 t 0 1.5 3.0 4.5 6.0 7.5 AV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS ) 100 3.0 A ( PULSE DURATION = 80
µ
s PULSE DURATION = 80
µ
s NT DUTY CYCLE = 0.5% MAX. CE DUTY CYCLE = 0.5% MAX. 2.5 80 V UR GS = 5V, ID = 30A O CURRE S 2.0 -55oC 25oC O 175oC 60 ANCE T URCE O IS 1.5 S S DRAIN T O 40 D E RE N N T 1.0 IZ O AL 20 , DRAI RM 0.5 N) O V N (O DD = 15V I DS 0 0 0 1.5 3.0 4.5 6.0 7.5 -80 -40 0 40 80 120 160 200 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 2.0 VGS = VDS, ID = 250
µ
A ID = 250
µ
A URCE E E 1.5 O 1.5 E G G T A S A A T O T L T L G O O D V E D V N 1.0 IZ 1.0 L W DRAIN AL O H D S E RM IZ AKDO NO HRE 0.5 AL 0.5 T BRE RM NO 0 0 -80 -80 -40 0 40 80 120 160 200 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN JUNCTION TEMPERATURE VOLTAGE vs JUNCTION TEMPERATURE
©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1
Unless Otherwise Specified
(Continued) 100 100 ) STARTING TJ = 25oC TC = 25oC VGS = 10V (A STARTING TJ = 150oC VGS = 5V NT 80 ) A ( V NT GS = 4.5V CURRE 60 10 VGS = 4V CHE AN 40 AL V A , If R = 0 , DRAIN CURRE V t GS = 3V AV = (L)(IAS)/(1.3*RATED BVDSS - VDD) D I AS If R
≠
0 I 20 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] PULSE DURATION = 80
µ
s 1 DUTY CYCLE = 0.5% MAX. 0.01 0.1 1 10 0 t 0 1.5 3.0 4.5 6.0 7.5 AV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS ) 100 3.0 A ( PULSE DURATION = 80
µ
s PULSE DURATION = 80
µ
s NT DUTY CYCLE = 0.5% MAX. CE DUTY CYCLE = 0.5% MAX. 2.5 80 V UR GS = 5V, ID = 30A O CURRE S 2.0 -55oC 25oC O 175oC 60 ANCE T URCE O IS 1.5 S S DRAIN T O 40 D E RE N N T 1.0 IZ O AL 20 , DRAI RM 0.5 N) O V N (O DD = 15V I DS 0 0 0 1.5 3.0 4.5 6.0 7.5 -80 -40 0 40 80 120 160 200 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 2.0 VGS = VDS, ID = 250
µ
A ID = 250
µ
A URCE E E 1.5 O 1.5 E G G T A S A A T O T L T L G O O D V E D V N 1.0 IZ 1.0 L W DRAIN AL O H D S E RM IZ AKDO NO HRE 0.5 AL 0.5 T BRE RM NO 0 0 -80 -80 -40 0 40 80 120 160 200 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN JUNCTION TEMPERATURE VOLTAGE vs JUNCTION TEMPERATURE
©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1
