Datasheet IGLD60R190D1 (Infineon) - 5
| Manufacturer | Infineon |
| Description | 600V CoolGaN™ enhancement-mode Power Transistor |
| Pages / Page | 17 / 5 — IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. … |
| Revision | 02_00 |
| File Format / Size | PDF / 1.1 Mb |
| Document Language | English |
IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. Electrical characteristics. Table 5. Static characteristics
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IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor 3 Electrical characteristics
at Tj = 25 °C, unless specified otherwise
Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
Gate threshold voltage VGS(th) 0.9 1.2 1.6 V IDS = 0.96 mA; VDS = 10 V; Tj =25 °C 0.7 1.0 1.4 IDS = 0.96 mA; VDS = 10 V; Tj =125 °C Drain-Source leakage current - 0.4 40 µA V I DS = 600 V; VGS = 0 V; Tj = 25 °C DSS - 8 - VDS = 600 V; VGS = 0 V; Tj = 150 °C Drain-Source leakage current at I application conditions1 DSSapp - 23 - μA VDS = 400 V; VGS = 0 V; Tj = 125 °C Gate-Source leakage current -1 - - mA V I DS = 0 V; VGS = -10 V; Tj = 25 °C GSS -1 - - VDS = 0 V; VGS = -10 V; Tj = 125 °C Drain-Source on-state resistance - 0.14 0.19 Ω I R G = 9.6 mA; ID = 5 A; Tj = 25 °C DS(on) - 0.26 - IG = 9.6 mA; ID = 5 A; Tj = 150 °C Gate resistance RG,int - 0.27 - Ω LCR impedance measurement; f = fres ; open drain;
Table 6 Dynamic characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
V Input capacitance C GS = 0 V; VDS = 400 V; iss - 157 - pF f = 1 MHz V Output capacitance C GS = 0 V; VDS = 400 V; oss - 28 - pF f = 1 MHz Reverse Transfer capacitance Crss - 0.15 - V pF GS = 0 V; VDS = 400 V; f = 1 MHz Effective output capacitance, C energy related 2 o(er) - 32.5 - pF VDS = 0 to 400 V Effective output capacitance, V C GS = 0 V; VDS = 0 to 400 V; time related 3 o(tr) - 40 - pF Id = const Output charge Qoss - 16 - nC VDS = 0 to 400 V Turn- on delay time td(on) - 11 - ns see Figure 23 Turn- off delay time td(off) - 12 - ns see Figure 23 Rise time tr - 5 - ns see Figure 23 Fall time tf - 12 - ns see Figure 23 1 Parameter represents end of use leakage in applications 2 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V 3 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V Final Data Sheet 5 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History
IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor 3 Electrical characteristics
at Tj = 25 °C, unless specified otherwise
Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
Gate threshold voltage VGS(th) 0.9 1.2 1.6 V IDS = 0.96 mA; VDS = 10 V; Tj =25 °C 0.7 1.0 1.4 IDS = 0.96 mA; VDS = 10 V; Tj =125 °C Drain-Source leakage current - 0.4 40 µA V I DS = 600 V; VGS = 0 V; Tj = 25 °C DSS - 8 - VDS = 600 V; VGS = 0 V; Tj = 150 °C Drain-Source leakage current at I application conditions1 DSSapp - 23 - μA VDS = 400 V; VGS = 0 V; Tj = 125 °C Gate-Source leakage current -1 - - mA V I DS = 0 V; VGS = -10 V; Tj = 25 °C GSS -1 - - VDS = 0 V; VGS = -10 V; Tj = 125 °C Drain-Source on-state resistance - 0.14 0.19 Ω I R G = 9.6 mA; ID = 5 A; Tj = 25 °C DS(on) - 0.26 - IG = 9.6 mA; ID = 5 A; Tj = 150 °C Gate resistance RG,int - 0.27 - Ω LCR impedance measurement; f = fres ; open drain;
Table 6 Dynamic characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
V Input capacitance C GS = 0 V; VDS = 400 V; iss - 157 - pF f = 1 MHz V Output capacitance C GS = 0 V; VDS = 400 V; oss - 28 - pF f = 1 MHz Reverse Transfer capacitance Crss - 0.15 - V pF GS = 0 V; VDS = 400 V; f = 1 MHz Effective output capacitance, C energy related 2 o(er) - 32.5 - pF VDS = 0 to 400 V Effective output capacitance, V C GS = 0 V; VDS = 0 to 400 V; time related 3 o(tr) - 40 - pF Id = const Output charge Qoss - 16 - nC VDS = 0 to 400 V Turn- on delay time td(on) - 11 - ns see Figure 23 Turn- off delay time td(off) - 12 - ns see Figure 23 Rise time tr - 5 - ns see Figure 23 Fall time tf - 12 - ns see Figure 23 1 Parameter represents end of use leakage in applications 2 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V 3 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V Final Data Sheet 5 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History
