Datasheet BC846, BC847, BC848, BC850 (ON Semiconductor) - 3

BC846 / BC847 / BC848 / BC850 — Electrical Characteristics
(3) Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800 Collector-Emitter Saturation IC = 10 mA, IB = 0.5 mA 90 250 VCE(sat) mV Voltage IC = 100 mA, IB = 5 mA 200 600 IC = 10 mA, IB = 0.5 mA 700 VBE(sat) Collector-Base Saturation Voltage mV IC = 100 mA, IB = 5 mA 900 VCE = 5 V, IC = 2 mA 580 660 700 VBE(on) Base-Emitter On Voltage mV VCE = 5 V, IC = 10 mA 720 V f CE = 5 V, IC = 10 mA, T Current Gain Bandwidth Product 300 MHz
NPN
f = 100 MHz Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF
Epit
Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF BC846 / BC847 / BC848 V 2.0 10.0 CE = 5 V, IC = 200 μA,
axia
Noise R BC850 G = 2 kΩ, f = 1 kHz 1.2 4.0 NF dB Figure
l
V
Silicon T
BC850 CE = 5 V, IC = 200 μA, 1.4 3.0 RG = 2 kΩ, f = 30 to 15000 Hz
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
ransistor hFE Classification Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800 www.onsemi.com 3